Nano-insulation reflective paint

A technology of reflective coatings and nano-heat insulation, applied in the direction of reflection/signal coatings, coatings, etc., can solve the problems of increased raw material costs, inability to be widely used, limited storage capacity, etc., and achieve stable performance, good heat insulation effect, and high barrier rate effect

Inactive Publication Date: 2012-10-03
FOSHAN FUQUAN NEW MATERIAL TECH DEVCO
View PDF3 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the published patent literature, there are some thermal insulation coatings, Sb-doped SnO 2 , (ATO), due to the influence of its own carrier concentration and other factors, makes its plasma cut-off frequency in the near-infrared region, so it has a good reflection and absorption effect on the radiation in the near-infrared region, but the Sb contained in ATO Elements are heavy metal elements with certain toxicity
while Sn-doped In 2 o 3 (ITO) has a fairly high infrared blocking effect and high transparency of visible light, but the In element is a precious metal element, and its storage capacity on the earth is very limited, and the use of the In element also increases the cost of raw materials, resulting in inability to widely used

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Embodiment 1, according to the mass percentage of the composition, select the semiconductor material ITO: 5%, hollow glass microspheres: 1%, SiO 2 Airgel: 2%, water: 38%, put it into a high-energy grinder for grinding, after the grinding is completed, put it into a mixer to stir fully, and then adjust the pH value of the solution by electrochemical method to make it equal to the isoelectric The pH value of the point has the largest difference. Finally, the dispersed nanomaterial water slurry and water-based acrylic resin film-forming agent: 50%, add additives: 4% and adjust the pH value of the system to obtain a finished product with stable performance.

Embodiment 2

[0020] Embodiment 2, select the semiconductor material ITO: 3%, hollow glass microspheres: 4%, SiO2 according to the mass percentage of the composition 2 Airgel: 5%, water: 30%, put it into a high-energy grinder and grind it. After the grinding is completed, put it into a mixer and stir it thoroughly, and then adjust the pH value of the solution by electrochemical method to make it equal to the isoelectric The pH value of the point has the largest difference. Finally, the dispersed nano-material water slurry and the water-based acrylic resin film-forming agent: 55%, are added with an additive: 3% and the pH value of the system is adjusted to obtain a finished product with stable performance.

Embodiment 3

[0021] Embodiment three, select the semiconductor material ITO according to the mass percentage of the composition: 25%, hollow glass microspheres: 3%, SiO 2 Airgel: 2%, water: 25%, put it into a high-energy grinder for grinding, after the grinding is completed, put it into a mixer to stir fully, and then adjust the pH value of the solution by electrochemical method to make it equal to the isoelectric The pH value of the point has the largest difference. Finally, the dispersed nano-material water slurry and the water-based acrylic resin film-forming agent: 40%, add additives: 5% and adjust the pH value of the system to obtain a finished product with stable performance.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a nano-insulation reflective paint, which comprises a nano-inorganic material, a film forming substance, hollow glass microspheres, inorganic nano-particles, and additive and a proper amount of water. According to the nano-insulation reflective paint, the nano-inorganic material, the inorganic nano-particles and the hollow glass microspheres are mixed to form a gas layer which has a heat blocking effect and can reflect solar heat as much as possible; the pH value of solution, which is adjusted by using an electro-chemical method, differs from that of an isoelectric point maximally, so that a similar double electrode layer structure is formed at the interface of the nano-particles, so that the dispersibility and stability of the inorganic nano-particles and hollow microspheres are solved; and the manufactured paint film can save energy by about 35 percent.

Description

technical field [0001] The invention relates to a nano heat-insulating reflective paint. technical background [0002] At present, improving the effect of thermal insulation coatings and avoiding fires is a hot topic in the construction industry and coating manufacturing industry. [0003] In the published patent literature, there are some thermal insulation coatings, Sb-doped SnO 2 , (ATO), due to the influence of its own carrier concentration and other factors, makes its plasma cut-off frequency in the near-infrared region, so it has a good reflection and absorption effect on the radiation in the near-infrared region, but the Sb contained in ATO Elements are heavy metal elements with certain toxicity. while Sn-doped In 2 o 3 (ITO) has a fairly high infrared blocking effect and high transparency of visible light, but the In element is a precious metal element, and its storage capacity on the earth is very limited, and the use of the In element also increases the cost of...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C09D133/00C09D7/12C09D5/33
Inventor 黄伟明
Owner FOSHAN FUQUAN NEW MATERIAL TECH DEVCO
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products