Work structure for providing scanning path of immersion photoetching machine
A technology of scanning path and lithography machine, which is applied in the field of microelectronics and can solve problems such as low product yield
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[0016] The present invention will be further described below in combination with the principle diagram and specific operation embodiments.
[0017] See figure 2 As shown in the present invention, a working structure for providing a scanning path of an immersion lithography machine specifically includes:
[0018] A silicon wafer 1, the silicon wafer includes a plurality of wafers 2, on the substrate surface of the silicon wafer 1 includes a bottom anti-reflective layer (not shown in the figure), photoresist (not shown in the figure); in order to prevent immersion The volatiles of the photoresist damage the lens of the lithography machine, and a top coating layer (not shown in the figure) may be included on the surface of the photoresist, which can be completely dissolved in the developing liquid Hydrophobic coating. The top coating layer can also be a layer of top anti-reflective coating (TARC), which is coated on the surface of the photoresist to reduce light reflection.
[0019]...
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