Manufacturing method of vertical-structured light emitting diode (LED)
A light-emitting diode, vertical structure technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of unsuitable industrial production, low heat dissipation efficiency, affecting the performance data of LED chips, etc., and achieve the effect of accurate and reliable measurement data.
Active Publication Date: 2014-12-03
NANTONG TONGFANG SEMICON
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Problems solved by technology
The main problems of traditional gallium nitride-based semiconductor light-emitting diodes with sapphire as the main growth substrate include: current congestion, low current density, low heat dissipation efficiency, etc.
The former is time-consuming and labor-intensive, and is not suitable for industrial production. The latter will cause irregular changes in the photoelectric characteristics of the LED chip due to the separation of the LED chip, which will affect the final performance data of the LED chip.
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[0028] see Figure 1 to Figure 12 , the preparation method steps of the present invention are:
[0029] see figure 1 , growing an N-type semiconductor layer 102, a quantum well active region 103, and a P-type semiconductor layer 104 sequentially on the sapphire substrate 101 by metal-organic chemical vapor deposition;
[0030] see figure 2 , evaporating a reflective metal layer 105 with a thickness of 1000-10000 Å on the P-type semiconductor layer 104, and annealing for 10-30 minutes in a nitrogen environment, so that an ohmic contact is formed between the reflective metal layer 105 and the P-type semiconductor layer 104;
[0031] see image 3 , using inductively coupled plasma ICP etching to form an isolation trench, and the etching finally stops on the surface of the sapphire substrate 101;
[0032] see Figure 4 . filling the isolation trench with a photoresist 106 with a thickness of 30-300 microns;
[0033] see Figure 5 , depositing a layer of diffusion...
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The invention discloses a vertical-structured light emitting diode (LED) and a manufacturing method thereof, which relates to the technical field of photoelectricity. The LED comprises a substrate, a reflective metal layer, a P-typed semi conductive layer, a quantum well source zone and an N-typed semi conductive layer which are subsequently superimposed on the substrate. Side walls of the P-typed semi conductive layer, the quantum well source zone and the N-typed semi conductive layer as well as a top face of the N-typed semi conductive layer are coated with an insulation protective layer, and two N-typed electrodes are arranged on the N-typed semi conductive layer. The structure of the LED is characterized in that one end of the substrate is provided with a third electrode with a same direction of the two N-typed electrodes. According to the LED, the novel third electrode is formed on a face N of the chip as a testing electrode, so that a large-scale and high efficiency test for a vertical chip is realized, and the measuring data is accurate.
Description
technical field [0001] The invention relates to the field of optoelectronic technology, in particular to a preparation method of a vertical structure light emitting diode. Background technique [0002] High-power semiconductor light-emitting diodes have great prospects to replace incandescent lamps and fluorescent lamps, and then become the next generation of lighting sources. However, the first thing to solve is its own technical problems. Due to their different structures, semiconductor light-emitting diodes can be divided into two categories: frontal structure and vertical structure. The main problems of traditional gallium nitride-based semiconductor light-emitting diodes with sapphire as the main growth substrate include: current congestion, low current density, and low heat dissipation efficiency. In order to solve many problems of high-power gallium nitride-based semiconductor light-emitting diodes with a front-mounted structure, the manufacturing method of vertical...
Claims
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IPC IPC(8): H01L33/36H01L33/02H01L33/00
Inventor 纪涛郭德博张华东刘刚
Owner NANTONG TONGFANG SEMICON