Device for measuring multi-degree-of-freedom displacement of wafer stage by laser interferometer
A technology of laser interferometer and silicon wafer stage, which is applied in the direction of measuring device, optical device, photoplate making process exposure device, etc., can solve the problems of increased energy consumption, increased thickness of silicon wafer stage, heat generation, etc., and achieves performance improvement, The effect of reducing volume and mass
Active Publication Date: 2015-02-18
TSINGHUA UNIV +1
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The measurement system and scheme described in the above-mentioned patents are easy to implement, and can meet the requirements of the six-degree-of-freedom displacement measurement stroke and measurement accuracy of the silicon wafer stage after precise assembly and adjustment. However, a long reflector and a 45° reflection The mirror will greatly increase the thickness of the wafer stage, and then increase the volume and quality of the wafer stage, which will bring about a series of problems such as reduced dynamic performance of the wafer stage system, increased energy consumption, and serious heat generation. This will affect the design of the wafer stage, Manufacturing and control pose great challenges
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[0022] The embodiments of the present invention will be further described in detail below in conjunction with the accompanying drawings.
[0023] Please refer to figure 1 , figure 1 It is a simple schematic diagram of an embodiment of a device for measuring the multi-degree-of-freedom displacement of a silicon wafer stage using a laser interferometer in the present invention, as figure 1 As shown, a device for measuring the multi-degree-of-freedom displacement of a silicon wafer stage using a laser interferometer includes a laser 1, a first plane mirror interferometer 2, a long reflector, a plane reflector 6, a receiver 8 and a reading unit 9 to measure multiple The device of the degree of freedom displacement also includes a polarization device 3; the long reflector is installed on the silicon wafer stage 5, and the plane reflector 6 is installed on the measurement frame 7; Contain polarizing mirror surface 4a and reflective mirror surface 4b, reflective mirror surface 4b i...
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The invention discloses a device for measuring the multi-degree-of-freedom displacement of a wafer stage by a laser interferometer. The device comprises a laser, a plane mirror interferometer, a receiver, a reading unit, a polarizing device, a plane reflecting mirror and a reflecting and transmitting prism installed on the wafer stage, wherein the reflecting and transmitting prism is provided with a polarization mirror surface and a reflecting mirror surface; the plane mirror interferometer at least emits two beams of light along the horizontal direction; the transmission direction of one beam of light is changed into the vertical direction from the horizontal direction via the polarizing device and the polarization mirror surface of the reflecting and transmitting prism for measuring vertical displacement; and the rest measurement light which does not pass through the polarizing device is used for measuring the horizontal isotropic displacement. According to the device for measuring the multi-degree-of-freedom displacement of the wafer stage by the laser interferometer, on the basis of satisfying the measurement requirement of the wafer stage, the size and the quality of the wafer stage are greatly lowered, and the indexes, such as the dynamic performance and the power consumption of a wafer stage system are improved.
Description
technical field [0001] The invention relates to a laser interferometer measuring device, in particular to a device for measuring the multi-freedom displacement of a silicon wafer stage by using an interferometer. Background technique [0002] In the lithography machine system, the silicon wafer stage is a motion platform used to carry silicon wafers for step-and-scan movement. The productivity and overlay accuracy of the lithography machine determine the high-speed, high-acceleration, large-stroke, and ultra-precision of the silicon wafer stage. sports characteristics. The measurement of the six-degree-of-freedom displacement of the silicon wafer stage usually uses a laser interferometer measurement system. [0003] Define the horizontal direction of the coordinate system as the x direction and the y direction, the vertical direction as the z direction, and the rotation around the x, y, and z directions as Rx, Ry, and Rz, respectively. In the six-degree-of-freedom displace...
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IPC IPC(8): G01B11/02G03F7/20
Inventor 张鸣朱煜王磊杰刘昊刘召杨开明徐登峰胡金春尹文生
Owner TSINGHUA UNIV