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Conductive film and method for manufacturing same

一种制造方法、导电膜的技术，应用在印刷电路制造、电缆/导体制造、绝缘载体上的导电层等方向，达到导电性优异、工业价值大、简单制造的效果

Inactive Publication Date: 2014-12-31
KYOTO UNIV +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] As mentioned above, although the conductive film with the metal grid on the surface produced by the conventional technology has high conductivity, there is a problem in either the formation of a fine pattern or the enlargement of the area.

Method used

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  • Conductive film and method for manufacturing same
  • Conductive film and method for manufacturing same
  • Conductive film and method for manufacturing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1~11

[0255] Use a glass substrate (size: 50mm×50mm×1.0mm, light transmittance: 91%, surface resistivity value: 10 10 Ω / □ or more, manufactured by Matsunami Glass Industry Co., Ltd.) as the substrate (A).

[0256] As the mold (B), a stainless steel wire mesh (flat-woven wire mesh) as shown in Table 1 was used.

[0257] The following aqueous dispersion of gold microparticles was diluted with an appropriate amount of deionized water to have the solid content shown in Table 1, which was used as a dispersion (D).

[0258] Finesphere Gold W011 (manufactured by Nippon Paint Co., Ltd, conductive fine particles: gold, mass average particle diameter 10nm, solid content 10% by mass (trade name))

[0259] Finesphere Gold W101 (manufactured by Nippon Paint Co., Ltd., conductive particles: gold, mass average particle diameter 20nm, solid content 10% by mass (trade name))

[0260] A stainless steel wire mesh was placed on the surface of the glass substrate, and an aqueous dispersion of gold fine particles ...

Embodiment 12

[0267] After the aqueous dispersion of gold fine particles was developed and dried at 5° C. for 60 minutes, the same operation (twice development-drying) was repeated, except that the same operation as in Example 5 was carried out to obtain a conductive film.

manufacture example 1

[0268]

[0269] A 250 mesh microsieve (manufactured by Tokyo Process Service Co., Ltd., line width: 20 μm, pitch: 102 μm, aperture ratio: 75%) was coated with a suspension in which silica particles with a particle size of 100 nm were dispersed on the bottom surface After that, let it dry. Further heating to 450°C welded the silica particles to the bottom surface of the microsieve to hydrophilize the bottom surface to form a fine line with uneven surface.

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Abstract

To provide a method for producing a conductive film with excellent transparency and conductivity by a simple method suitable for large-area production. A method for producing a conductive film comprising a step of placing a template (B), having openings in a mesh structure running from the side that is to contact a substrate (A) through to the back side, on the surface of the substrate (A), and spreading a dispersion (D) of conductive particles (P) on the surface of the substrate (A) on which the template (B) has been placed, and drying it, thereby forming a mesh-like structure (C) of the conductive particles (P) near the points of contact between the substrate (A) and the template (B), and then removing the template (B) from the substrate (A) to form a mesh-like structure (C) of the conductive particles (P) on the surface of the substrate (A).

Description

Technical field [0001] The present invention relates to a conductive film excellent in transparency and conductivity and a method of manufacturing the same. Background technique [0002] Conductive films with excellent transparency are widely used in display electrodes of flat panel displays such as plasma displays and liquid crystal displays; transparent electrodes for touch panels; transparent electrodes for solar cells; and electromagnetic wave shielding films. [0003] As a material for forming a conductive film having excellent transparency, tin-doped indium oxide (hereinafter referred to as “ITO”) is known. The ITO film is manufactured by a gas phase method such as a sputtering method and a vacuum evaporation method. However, a high vacuum device is necessary in the gas phase method, which requires a large investment in equipment. Especially in applications requiring a large area, the equipment investment and maintenance costs have also become very large. In addition, each ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B13/00H01B5/14
CPCH01B1/02H05K9/0094H05K1/097H05K3/1216H01B5/14H01B13/00H05K1/092
Inventor 东谷公都藤靖泰中山将辉挂伸二
Owner KYOTO UNIV