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Method for enhancing success rate of extracting transmission electron microscope sample prepared by focused ion beam

A transmission electron microscope sample and focused ion beam technology, applied in the preparation of test samples, material analysis by measuring secondary emissions, etc., can solve the problems of sample transfer adsorption failure, sample extraction failure, and uncontrollable electrostatic adsorption force of glass needles and other problems to achieve the effect of avoiding sample extraction failure, improving success rate, and easy operation

Inactive Publication Date: 2012-10-24
SHANGHAI HUALI MICROELECTRONICS CORP
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Problems solved by technology

[0005] However, during the adsorption process, due to the uncontrollable electrostatic adsorption force of the glass needle, the sample may be adsorbed to a non-needle tip position, resulting in the inability of the sample to be transferred and adsorbed on the carbon film copper grid, and ultimately lead to sample extraction failure.

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  • Method for enhancing success rate of extracting transmission electron microscope sample prepared by focused ion beam
  • Method for enhancing success rate of extracting transmission electron microscope sample prepared by focused ion beam
  • Method for enhancing success rate of extracting transmission electron microscope sample prepared by focused ion beam

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Embodiment Construction

[0023] The method for improving the success rate of TEM samples prepared by extracting focused ion beams proposed by the present invention will be further described in detail below with reference to the accompanying drawings and specific examples. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in very simplified form and use imprecise ratios, which are only used for the purpose of conveniently and clearly assisting in describing the embodiments of the present invention.

[0024] The core idea of ​​the present invention is to provide a method for improving the success rate of extracting the transmission electron microscope sample prepared by the focused ion beam. When the sample is randomly adsorbed to the non-point position of the first glass needle, the first glass needle and put it on a specific metal base, use the tip of the second glass needle to absorb the sample on ...

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Abstract

The invention discloses a method for enhancing the success rate of extracting a transmission electron microscope sample prepared by a focused ion beam. According to the method, when the sample is randomly adsorbed to the non-needlepoint position of a first glass needle, the first glass needle is taken down and put on a specific metal base; the sample on the first glass needle is adsorbed by using a needlepoint of a second glass needle so that the sample is adsorbed to the needlepoint position of the second glass needle and put on a sample carrier, therefore, the failure in sample extraction because the sample is adsorbed to the non-needlepoint position of the first glass needle is avoided; the success rate of the sample extraction is enhanced; the cost is reduced; and the operation is easy and simple.

Description

technical field [0001] The invention relates to the technical field of microscopic detection, in particular to a method for improving the success rate of transmission electron microscope samples prepared by extracting focused ion beams. Background technique [0002] As an important tool of electron microscopy, Transmission Electron Microscope (TEM) can simultaneously analyze the microstructure, crystal structure, constituent elements, chemical bonding state, and electron distribution structure of micro-regions. It is a powerful tool for solid material analysis. One of the tools. With the continuous development of the semiconductor industry, the continuous improvement of technology, the continuous reduction of chip size, and the increasingly diversified, three-dimensional, and miniaturized growth of materials, the interfaces, strain states, strain relaxation and The subsequent formation of lattice mismatch dislocations, etc., provides a broad development space for the use of...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N23/22G01N1/28G01N1/36
Inventor 高林王炯翀陈强高金德
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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