Method for manufacturing wafer-level light-emitting diode (LED)

Abstract

The invention discloses a method for manufacturing a wafer-level light-emitting diode (LED). The method comprises the following steps of: providing a substrate, wherein a plurality of LED chips are arranged on the substrate; performing spot measurement on the LED chips, so that the LED chips are classified into a coating region and a non-coating region; pasting at least one shielding piece on a shield, so that the non-coating region in the LED chips is shielded; aligning the shield on the non-coating region, and spraying fluorescent powder; and separating the shield from the non-coating region, so that the fluorescent powder is only sprayed in the coating region in the LED chips. According to the manufacturing method, the limitation that the known fluorescent powder needs to be sprayed in the whole wafer can be avoided, and a white LED with different color temperature requirements can be manufactured on a single wafer.

Description

technical field [0001] The invention relates to a method for manufacturing a wafer-level light-emitting diode, in particular to a method for making a white light-emitting diode with uniform color temperature by partially spraying fluorescent powder. Background technique [0002] With the great improvement of epitaxy, manufacturing process and packaging technology, the Light emitting diode (LED) of inorganic materials has surpassed the traditional application scope. Internal and external warning lighting, large outdoor billboards, etc.; in the general lighting part, LEDs are gradually developing from the current auxiliary lighting purpose to an important main lighting source. [0003] Generally speaking, white light LEDs made of phosphor powder excited by blue light grains are widely used in the market due to their advantages of simple driving circuit and low cost. However, its disadvantages also include: the conversion efficiency of phosphor is poor, the light emission inte...

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Problems solved by technology

[0004] In the prior art, the spray method is often used to obtain a uniform phosphor film. However, this method is easy to manufacture white LEDs at the wafer level due to the brightness and wavelength distribution of the epitaxial chip itself. There is still the problem that the color temperature distribution is not concentrated enough

[0005] In addition, the existing method of spraying phosphor powder can only spray the phosphor powder on the wafer all at once, resulting in white LEDs that can only be fixed at a specific color temperature and cannot be fabricated on a single wafer White LEDs that can form a variety of specific color temperatures

[0006] Moreover, blue light crystal grains that cause wavelength shift after being coated with fluorescent powder cannot continue to be sold to manufacturers that need blue light grains. This not only creates inventory pressure for commercial use, but also causes waste of production costs.

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