Laminated organic electroluminescent device and preparation method thereof
A technology for electroluminescent devices and electroluminescent layers, which is applied in the fields of electro-solid devices, semiconductor/solid-state device manufacturing, electrical components, etc., and can solve the problems of low luminous efficiency of light-emitting devices, limited electron and hole regeneration capabilities, etc.
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[0043] Such as figure 2 The preparation method of the above-mentioned laminated organic electroluminescence device includes the following steps.
[0044] S10, providing an anode.
[0045] S20, forming two organic electroluminescent layers and a charge generation layer between the two organic electroluminescent layers by vapor deposition on one surface of the anode.
[0046] Taking two organic electroluminescent layers and one charge generating layer as an example, the organic electroluminescent layer, the charge generating layer and the organic electroluminescent layer are sequentially evaporated on one surface of the anode to form the organic electroluminescent layer.
[0047] The charge generation layer includes the following structures stacked in sequence: an n-type doped layer, a bipolar metal oxide layer and a p-type doped layer, and the n-type doped layer is closer to the anode than the p-type doped layer.
[0048] The material of the n-type doped layer is an electron...
Embodiment 1
[0055] Use indium tin oxide glass (ITO) as the anode, and sequentially evaporate the hole injection layer on the anode: the material is MoO 3 , the thickness is 40nm, the hole transport layer: the material is NPB, the thickness is 40nm, the light emitting layer: the material is Alq 3 , a thickness of 20nm and an electron transport layer: the material is Bphen, and the thickness is 60nm to obtain a first organic electroluminescent layer comprising a hole injection layer, a hole transport layer, a light emitting layer and an electron transport layer. Then evaporate the n-type doped layer, the material is doped with Cs 2 CO 3 Bphen, the thickness is 7nm, where Cs 2 CO 3 The doping ratio is 40%. Then evaporate the bipolar metal oxide layer, the material is MoO 3 , with a thickness of 5 nm. Finally, a p-type doped layer is evaporated, made of m-MTDATA doped with F4-TCNQ, with a thickness of 10nm, and the doping ratio of F4-TCNQ is 2%. Then continue to vapor-deposit the secon...
Embodiment 2
[0057] Use fluorine-containing tin oxide glass (FTO) as the anode, and sequentially evaporate the hole injection layer on the anode: the material is MoO 3 , the thickness is 40nm thick, the hole transport layer: the material is NPB, the thickness is 40nm, the light emitting layer: the material is Alq 3 The thickness is 20nm and the electron transport layer: the material is Bphen, the thickness is 60nm, and the first organic electroluminescent layer including the hole injection layer, the hole transport layer, the light emitting layer and the electron transport layer is obtained. Then evaporate the n-type doped layer, the material is doped with Cs 2 CO 3 Bphen, the thickness is 15nm, where Cs 2 CO 3 The doping ratio is 40%. Then evaporate the bipolar metal oxide layer, the material is MoO 3 , with a thickness of 5 nm. Finally, a p-type doped layer was evaporated, made of m-MTDATA doped with F4-TCNQ, with a thickness of 15nm, and the doping ratio of F4-TCNQ was 2%. Then c...
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