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Gate driver

一种栅极驱动电路、栅极的技术，应用在电气元件、电子开关、高效电力电子转换等方向，能够解决误动作、变低等问题，达到稳定导通的效果

Active Publication Date: 2012-12-05
SANKEN ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, under limited conditions, it is easy to cause malfunction due to noise due to lower threshold voltage

Method used

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Experimental program
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Effect test

Embodiment 1

[0032] figure 1 It is a circuit configuration diagram and a sequence diagram of the gate drive circuit according to Embodiment 1 of the present invention. exist figure 1 In the shown gate drive circuit, a series circuit of a switch S1 and a switch S2 is connected to both ends of the power supply Vcc. A pulse signal is generated by turning the switch S1 and the switch S2 on and off alternately. The switch S1 and the switch S2 correspond to a control circuit, and the pulse signal corresponds to a control signal.

[0033] The switching element Q1 is formed of a GaNFET and has a gate, a drain, and a source. A CR parallel circuit of a capacitor C1 and a resistor R1 is connected between the gate of the switching element Q1 and the connection point of the switches S1 and S2.

[0034] The aforementioned pulse signal is applied to the gate of the switching element Q1 via a CR parallel circuit of the capacitor C1 and the resistor R1.

[0035] In addition, in the gate drive circui...

Embodiment 2

[0043] figure 2 It is a circuit configuration diagram of the gate drive circuit of the second embodiment. figure 2 In the illustrated second embodiment, the switch S4 is constituted by bidirectional switches S4a and S4b that connect the sources and gates of n-type MOSFETs or p-type MOSFETs in common, respectively. The bidirectional switches S4a, S4b are connected in parallel to the gate / source of the switching element Q1. After the switching element Q1 is turned off, when a signal for turning on the bidirectional switches S4a and S4b is applied after a certain period of time has elapsed, the discharge of the capacitor C1 in the CR parallel circuit is quickly terminated. During the regenerative operation, it is preferable that the bidirectional switches S4a and S4b remain in the on state during the off period of the switching element Q1.

[0044] When a conventional gate driver IC is used, it is very troublesome to generate a signal for controlling the switch S4. When a p-...

Embodiment 3

[0056] Figure 4 It is a circuit configuration diagram of the gate drive circuit of the third embodiment. exist Figure 4 In the illustrated third embodiment, a capacitor C2 is connected between the gates of the bidirectional switches S4a, S4b and the output of the driver IC. A series circuit of a diode D1 and a resistor R2 is connected between the gates of the bidirectional switches S4a, S4b and the gate of the switching element Q1.

[0057] According to this configuration, at the instant when switching element Q1 is turned off, a negative voltage is applied to switching element Q1 due to the effect of the CR parallel circuit. Based on the time constant of the resistor R2 and the capacitor C2 connected to the gates of the bidirectional switches S4a, S4b, the gate voltage of the bidirectional switches S4a, S4b gradually increases to a negative voltage.

[0058] Furthermore, when the gate voltage of the switching element Q1 is a negative voltage, the switch S4b constituting ...

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Abstract

The invention provides a gate driver capable of stably turning on a switching element without varying a turn-on switching characteristic or causing a power loss. As a solution, the gate driver turns on / off a switching element Q1 by applying a control signal from a controller to a gate of the switching element which has the gate, a drain, and a source and contains a wide-bandgap semiconductor. The gate driver includes a parallel circuit that includes a first capacitor (C1) and a first resistor (R1) and is connected between the controller and the gate of the switching element and a short-circuit unit (S4) that is connected between the gate and source of the switching element and short-circuits the gate and source of the switching element after a delay from an OFF pulse of the control signal.

Description

technical field [0001] The present invention relates to a gate drive circuit for driving a gate of a switching element. Background technique [0002] GaN devices have significantly higher potential than existing Si devices, so their practical use is highly anticipated. However, the usual GaNFET is normally on, so a negative power supply is required. [0003] Normally-on GaNFETs, on the other hand, are very difficult to fabricate. In addition, the threshold voltage of normally-on GaNFET is about +1V, which is much lower than that of conventional SiMOSFETs (problem 1). [0004] In addition, in a normally-on GaNFET, there is no insulating structure between the gate and the source like SiMOSFET, and when a large voltage is applied, a diode characteristic in which a large current flows is exhibited. Therefore, when a large voltage is applied to the gate, the normally-on GaNFET is easily damaged (problem 2). [0005] That is, the conventional gate drive circuit for SiMOSFET (I...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M1/08
CPCY02B70/1466H02M3/1588H02M1/08Y02B70/10H03K17/162
Inventor 町田修佐藤伸二
Owner SANKEN ELECTRIC CO LTD
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