Warm white light-emitting diode (LED) and manufacturing method thereof

A technology for light-emitting diodes and a manufacturing method, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of large package structure, mixed light, and high cost, and achieve the effects of reducing the volume of the package structure, optimizing the process flow, and saving manufacturing costs.

Active Publication Date: 2012-12-12
TIANJIN SANAN OPTOELECTRONICS
View PDF4 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the following problems exist in the packaging process: the brightness emitted by the red chip is easily absorbed by the blue chip, and the brightness emitted by the blue chip is easily absorbed by the red chip. There is a certain distance, which has the problem of light mixing; in addition, the packaging structure needs to be large, which greatly increases the production cost; moreover, the red light chip and the blue light chip are individual chips, and the complicated wiring may cause abnormalities and high costs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Warm white light-emitting diode (LED) and manufacturing method thereof
  • Warm white light-emitting diode (LED) and manufacturing method thereof
  • Warm white light-emitting diode (LED) and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0033] like Figure 8 and 9 As shown, a warm white LED includes a solder layer 300, which has two major surfaces; a red wafer mirror system located on the first major surface of the solder layer 300; a blue light coated with yellow YAG phosphor 400 The wafer mirror system is located on the second main surface of the bonding layer 300; the area of ​​the lower surface of the red chip occupies one-third of the area of ​​the upper surface of the blue chip.

[0034] The red light wafer mirror system includes a red light wafer and a first reflective layer, the first reflective layer is made of grid-like SiO 2 The dielectric layer 107 and the Ag metal reflective layer 108 are composed; the red light chip is composed of the n-AlGaInP layer 101, the light emitting layer 102, the p-AlGaInP layer 103, the roughened GaP window layer 104 and the N electrode 105 from bottom to top.

[0035] The blue light chip mirror system includes a blue light chip and a second reflective layer 204. The...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a warm white light-emitting diode (LED) and a manufacturing method thereof. The warm white light-emitting diode is characterized in that a red light wafer and a blue light wafer are combined together through a seaming layer by an LED structure, and the upper and lower surfaces of the seaming layer are respectively provided with a reflecting layer; the area of the lower surface of the red light wafer is less than or equal to one third of the area of the upper surface of the blue light wafer, thereby effectively reducing the volume of a packaging structure; and routing times are reduced, a process flow is optimized, and the fabricating cost is saved.

Description

technical field [0001] The invention relates to a light-emitting diode and a preparation method thereof, more specifically a warm white light-emitting diode and a preparation method thereof. Background technique [0002] LED light-emitting diode is a solid-state semiconductor device that can directly convert electricity into light. White light LED has many advantages such as high luminous efficiency, power saving, no heat radiation, no heavy metals such as mercury, no pollution and waste disposal problems, etc., and is regarded as the rising star of "green lighting source". At present, there are mainly three ways to realize white light: the first way is that the blue LED light-emitting diode excites the yellow phosphor to produce white light; the second way is that the ultraviolet LED excites the RGB three-wavelength phosphor to produce white light; the third way is RGB The three-color LED light-emitting diodes are mixed to form white light. The first two methods rely on l...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/60H01L25/075
CPCH01L25/0756H01L33/0093H01L33/387H01L33/405H01L33/46H01L2224/06H01L2924/0002H01L33/007H01L33/0095H01L33/22H01L33/32H01L33/505H01L2933/0025H01L2933/0041H01L2924/00
Inventor 吴超瑜陈斌邱姝颍陈凯蒂谢建元蔡文必
Owner TIANJIN SANAN OPTOELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap