EUV radiation source and EUV radiation generation method

A radiation source, radiation beam technology, applied in the direction of X-ray tube, X-ray equipment, X-ray tube with huge current, etc. device or other optical surfaces, etc.

Inactive Publication Date: 2012-12-12
ASML NETHERLANDS BV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Debris particles are undesirable because they may be incident on collectors or other optical surfaces within lithographic apparatus and may reduce the reflectivity of collectors or other optical surfaces

Method used

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  • EUV radiation source and EUV radiation generation method
  • EUV radiation source and EUV radiation generation method
  • EUV radiation source and EUV radiation generation method

Examples

Experimental program
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Embodiment Construction

[0022] figure 1 A lithographic apparatus 100 comprising a source collector module SO according to one embodiment of the present invention is schematically shown. The equipment includes:

[0023] an illumination system (illuminator) IL configured to condition the radiation beam B (e.g. EUV radiation);

[0024] a support structure (e.g. a mask table) MT configured to support a patterning device (e.g. a mask or reticle) MA and connected to a first positioning device PM configured to precisely position the patterning device;

[0025] a substrate table (e.g. wafer table) WT configured to hold a substrate (e.g. a resist-coated wafer) W and connected to a second positioner PW configured to precisely position the substrate; and

[0026] A projection system (eg reflective projection system) PS configured for projecting the pattern imparted to the radiation beam B by the patterning device MA onto a target portion C of the substrate W (eg comprising one or more dies).

[0027] The ill...

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Abstract

An EUV radiation source comprises a fuel supply (200) configured to deliver a droplet of fuel to a plasma generation location (201), a first laser beam source configured to provide a first beam of laser radiation (205) incident upon the fuel droplet at the plasma generation location and thereby vaporizes the fuel droplet, and a second laser beam source configured to subsequently provide a second beam of laser radiation (205) at the plasma generation location, the second beam of laser radiation being configured to vaporize debris particles (252) arising from incomplete vaporization of the fuel droplet.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS [0002] This application claims the benefit of US Provisional Application 61 / 322,114, filed April 8, 2010, and US Provisional Application 61 / 363,720, filed July 13, 2010. Both provisional applications are hereby incorporated by reference in their entirety. technical field [0003] The present invention relates to EUV radiation sources and EUV radiation generation methods. The EUV radiation source may form part of a lithographic apparatus. Background technique [0004] A lithographic apparatus is a machine that applies a desired pattern to a substrate, usually a target portion of the substrate. Photolithographic equipment can be used, for example, in IC manufacturing processes. In this case, a patterning device, alternatively referred to as a mask or reticle, may be used to generate the circuit pattern to be formed on the individual layers of the IC. The pattern can be transferred onto a target portion (eg, comprising a port...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05G2/00G03F7/20
CPCH05G2/003G03F7/70033H05G2/008G03F7/70916H05G2/00G03F7/20
Inventor A·亚库宁V·班尼恩V·伊万诺夫K·科舍廖夫V·克里夫特苏恩D·克拉什科夫
Owner ASML NETHERLANDS BV
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