A Self-feedback Linear Constant Current Regulator Integrated with Adjustable Thermistor

A linear constant current and sensitive resistance technology, applied in the direction of transistors, can solve the problems of high cost and complex structure, and achieve the effect of adjustable transmission current, high integration, and reduced output current

Inactive Publication Date: 2015-07-29
UNIV OF ELECTRONICS SCI & TECH OF CHINA
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, it also has the disadvantages of complex structure and high cost.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A Self-feedback Linear Constant Current Regulator Integrated with Adjustable Thermistor
  • A Self-feedback Linear Constant Current Regulator Integrated with Adjustable Thermistor
  • A Self-feedback Linear Constant Current Regulator Integrated with Adjustable Thermistor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] A self-feedback linear current regulator with an integrated adjustable thermistor, such as figure 2 As shown, it includes P+ substrate 2, N- epitaxial layer 3 on the front side of P+ substrate 2, and metallized cathode 1 on the back side of P+ substrate 2; N-well regions in N-epitaxial layer 3 are independent of each other 5. The P+ ring 4 and the P+ resistance well region 9, wherein the P+ ring 4 surrounds the N-well region 5 and the P+ resistance well region 9; the N-well region 5 has N+ source regions 8 and N+ independent of each other. The drain region 6 and the P+ gate region 7; the P+ ring 4 and the P+ gate region 7 are connected through the third metal electrode 15, and the surface of the N+ drain region 6 is connected with the first metal electrode 13; the P+ resistance well region 9 has adjustable thermosensitive Resistor 10, one end of the adjustable thermistor 10 is connected to the N+ source region 8 through the second metal electrode 14, and the other end o...

Embodiment 2

[0023] A self-feedback linear current regulator with an integrated adjustable thermistor, such as figure 2 As shown, it includes N+ substrate 2, P- epitaxial layer 3 on the front side of N+ substrate 2, and metallized cathode 1 on the back side of N+ substrate 2; 5. N+ ring 4 and N+ resistance well region 9, wherein N+ ring 4 surrounds P-well region 5 and N+ resistance well region 9; P-well region 5 has P+ source regions 8, P+ The drain region 6 and the N+ gate region 7; the N+ ring 4 and the N+ gate region 7 are connected through the third metal electrode 15, and the surface of the P+ drain region 6 is connected with the first metal electrode 13; the N+ resistance well region 9 has an adjustable thermosensitive One end of the adjustable thermistor 10 is connected to the P+ source region 8 through the second metal electrode 14, and the other end of the adjustable thermistor 10 is connected to the N+ gate region 7 through the third metal electrode 15. Connection; the surface o...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a self-feedback linear galvanostat integrating an adjustable thermistor, which belomngs to the technical field of a semiconductor power device. The self-feedback linear galvanostat comprises a junction-type field effect transistor (JFET) and an adjustable thermistor, which are integrated together, wherein one end of the adjustable thermistor is connected with a JFET source electrode, and the other end is connected with a grid electrode of the JFET. The self-feedback linear galvanostat is centralized on the adjustable thermistor, and the adjustable thermistor can obtain a resistance value meeting the requirement of the output current through a laser cutting way, so that different types of products can be obtained in the same batch. The thermistor is a positive temperature coefficient, under the working situation, the temperature is increased, the resistance is increased, the output current is reduced, and the reliability of an application system is protected. The self-feedback linear galvanostat has advantages of high integration, stability in output current, adjustability of the current and good temperature property and can be applied to the fields such as light emitting diode (LED).

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices and relates to constant current driving technology. Background technique [0002] The constant current device is a device that can provide a constant current to the load. It can keep the output current constant when the external power supply fluctuates and the impedance characteristics change. It can provide bias current for various amplifier circuits to stabilize its static operation. point, and can be used as an active load to increase the magnification. The constant current device has a development history of nearly 50 years. From the early electric vacuum device constant current tube, it has developed into a semiconductor constant current diode and a constant current triode. Four-terminal adjustable constant current device, high-voltage constant current device, constant current type integrated temperature sensor) in a new era of comprehensive development. [0003] Semicon...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/098
Inventor 李泽宏李长安张仁辉李巍张金平任敏张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products