Monitoring method after removal of polysilicon dummy gate

Abstract

Provided is a monitoring method after removing a polycrystalline silicon dummy gate, comprising the following steps: forming a polycrystalline silicon dummy gate structure on the surface of a wafer; determining the measurement objective and error range for the quality of the wafer; after removing the polycrystalline silicon dummy gate, using a quality measuring device to measure the quality of the wafer, and judging whether the polycrystalline silicon dummy gate is completely removed. The measuring method of the present invention can measure the whole wafer quickly and accurately without a specific testing structure, thus effectively monitoring and judging whether the polycrystalline silicon dummy gate is completely removed. Furthermore, the measuring method feeds back the result visually, quickly and accurately, and causes no damage to the wafer.

Description

technical field [0001] The invention relates to a manufacturing method of a semiconductor device, more specifically, to a monitoring method after removing a polysilicon dummy gate. Background technique [0002] With the successful application of high-K / metal gate engineering on the 45nm technology node, it has become an indispensable key modular project for the sub-30nm technology node. At present, only Intel, which adheres to the high-K / gatelast route, has achieved success in mass production at 45nm and 32nm. In recent years, Samsung, TSMC, Infineon and other industry giants following the IBM industry alliance have also shifted the focus of previous development from high-K / gatefirst to gatelast engineering. [0003] In the Gatelast project, after the ion high-temperature annealing is completed, the polycrystalline gate needs to be dug out, and then the metal gate electrode is filled. The process is shown in Figure 1 for details. Such as Figure 1A An insulating layer 2 , ...

AI Technical Summary

Problems solved by technology

The most intuitive method is to use a scanning electron microscope to look at the cross-section of the wafer after the removal of the polycrystalline dummy gate 3, but this method is destructive to the wafer, and the feedback results are very slow, so it cannot be directly used for mass production. effective monitoring of

At the same time, most of the process monitoring in the integrated circuit industry currently uses optical measurement methods. With the continuous shrinking of technology nodes, device structures are becoming more and more complex, and laminated films are getting thinner and thinner. Traditional optical measurement The method has encountered great challenges

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