Electrostatic discharge protection circuit

Abstract

An electrostatic discharge protection circuit comprises a first inductance, a first resistance, a capacitance, a first electronic switch, a second electronic switch and a third electronic switch, wherein the first electronic switch, the second electronic switch and the third electronic switch comprise a control end, a first signal end and a second signal end respectively; a first end of the first inductance is connected with an interior operating voltage end of an integrated circuit and a second end of the first inductance is connected with a public ground end of the integrated circuit through the first resistance and the capacitance in sequence; the control ends of the first electronic switch and the second electronic switch are both connected between the first resistance and the capacitance; the second signal end of the first electronic switch is connected with the second end of the first inductance; the first signal end of the first electronic switch is connected with the first signal end of the second electronic switch; the second signal end of the second electronic switch is connected with the public ground end; and the control end of the third electronic switch is connected between the first signal ends of the first electronic switch and the second electronic switch. The electrostatic discharge protection circuit is used to discharge static electricity fast and effectively.

Description

[0001] technical field [0002] The invention relates to an electrostatic discharge protection circuit. [0003] Background technique [0004] Usually, the static electricity of a human body wearing nylon products may reach a high voltage of 21,000V, a discharge of about 750V can produce visible sparks, and a voltage of only about 10V may destroy a chip without electrostatic protection. Electro-static discharge (Electro-static Discharge, ESD) protection is one of the important tasks in the reliability design of CMOS integrated circuits. When the static charge accumulated on the outside or inside of the chip flows into or out of the chip through the pins of the chip, the instantaneous current (peak value can reach several amperes) or voltage will damage the integrated circuit and make the chip invalid. With the evolution of CMOS technology, the integration level of chips is getting higher and higher, and the size is getting smaller and smaller. ESD protection design is beco...

AI Technical Summary

Problems solved by technology

At high frequencies, even small parasitic capacitances can have severe RF effects

Therefore, the current ESD protection circuit has a very limited effect of discharging static electricity, and will affect the performance of the integrated circuit due to the introduction of parasitic capacitance

Images