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Chemical vapor deposition system and chemical vapor deposition method

A chemical vapor deposition and organic metal technology, applied in chemical instruments and methods, from chemically reactive gases, gaseous chemical plating, etc., can solve the problems of uneven epitaxy layer surface and increased manufacturing cost

Inactive Publication Date: 2015-04-15
PINECONE MATERIAL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although increasing the partial pressure of ammonia can increase the supply of nitrogen atoms, but at such a high partial pressure, the surface of the epitaxial layer will be uneven and the manufacturing cost will increase.

Method used

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  • Chemical vapor deposition system and chemical vapor deposition method
  • Chemical vapor deposition system and chemical vapor deposition method
  • Chemical vapor deposition system and chemical vapor deposition method

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Embodiment Construction

[0062] In the context of this patent, the term "coupled" refers to direct connection or indirect connection (eg, at least one intervening connection) among at least one object or element. Although the embodiments of the present invention describe a metalorganic chemical vapor deposition system and method for forming Group III / Group V materials, it should be understood that the present invention has wider application, for example: the organometallic chemical vapor deposition system of the present invention The chemical vapor deposition system and methods thereof can also be applied to the growth of Group II / VI materials.

[0063] Please refer to figure 1 , is a schematic diagram of the system structure of an embodiment of the metalorganic chemical vapor deposition system of the present invention. Such as figure 1 As shown, further details of the metalorganic chemical vapor deposition system 100 are described in the aforementioned US patent application Ser. No. 13 / 162,416. F...

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Abstract

The invention discloses an organometallic chemical vapor deposition system and method. The system includes a first gas inlet, a second gas inlet, a first pipeline branch and a second pipeline branch, the first gas inlet and The second gas inlet is located on a gas supply device, the first pipeline branch provides a gas to the first gas inlet and / or the second gas inlet, and the gas provided by the first pipeline branch is in the form of a first The flow flows to the first air inlet and / or flows to the second air inlet with a second flow rate, the second pipeline branch provides a gas to the first air inlet and / or the second air inlet, the second pipeline The gas provided by the branch part flows to the first gas inlet and / or the second gas inlet with at least a third flow rate.

Description

technical field [0001] The present invention relates to a system and method for forming semiconductor materials, in particular to a metalorganic chemical vapor deposition system and method for forming semiconductor materials. Although the present invention is applied to the formation of nitride materials (Group III) -III nitride materials) as an example, but it should be understood that the present invention has a wider range of applications. Background technique [0002] Metal-organic chemical vapor deposition (Metal-organic chemical vapor deposition; MOCVD) has been widely used in the fabrication of Group III / V materials (for example: aluminum nitride (aluminum nitride), gallium nitride (gallium nitride), and and / or an epitaxial layer of indium nitride (indium nitride). Organometallic organometallic chemical vapor deposition devices are often characterized by their ease of use and suitability for high-volume manufacturing. Usually, the nitride material of Group III eleme...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/455
CPCC23C16/303C23C16/45508C23C16/45561C30B29/403C30B25/14
Inventor 刘恒
Owner PINECONE MATERIAL