Silicon base tunneling magnetoresistance micro gyroscope

A technology of micro-gyroscope and micro-mechanical gyroscope, which is applied in the field of micro-inertial navigation, can solve the problems of limiting gyroscope detection accuracy, difficulty in improving accuracy, and sensitivity drift, etc., and achieve the effect of making full use of space, suppressing influence, and good reliability

Inactive Publication Date: 2013-01-02
ZHONGBEI UNIV
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Problems solved by technology

[0002] At present, the commonly used detection methods of micromechanical gyroscopes are capacitive and piezoresistive. The piezoresistive type is realized based on the principle of piezoresistive effect of highly doped silicon. The pressure sensitive device formed by highly doped silicon has a strong temperature Dependence, the bridge detection circuit composed of pressure sensitive devices will also cause sensitivity drift due to temperature changes; the improvement of capacitive precision is to increase the capacitance area, due to the miniaturization of the device, its accuracy is due to the reduction of the effective capacit

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  • Silicon base tunneling magnetoresistance micro gyroscope
  • Silicon base tunneling magnetoresistance micro gyroscope
  • Silicon base tunneling magnetoresistance micro gyroscope

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[0030] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0031] In the description of the present invention, it should be understood that the orientations or positional relationships indicated by the terms "center", "upper", "lower", "front", "rear", "left", "right" etc. are based on the attached The orientation or positional relationship shown in the figure is only for the convenience of describing the present invention and simplifying the description, and does not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific ...

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Abstract

The present invention discloses a silicon base tunneling magnetoresistance micro gyroscope, which comprises: a bonding substrate; a liner frame, wherein the liner frame is arranged above the bonding substrate and connected with the bonding substrate; a ferromagnetism film, wherein the ferromagnetism film is arranged on a center position of a rectangular groove formed by combination of the bonding substrate and the liner frame; and a micro gyroscope, wherein the micro gyroscope is arranged above the liner frame, is connected with the liner frame, and comprises a sensitive mass block correspondingly arranged above the rectangular groove, the upper surface of the sensitive mass block is provided with a giant magnetic resistance, the position of the giant magnetic resistance and the position of the ferromagnetism film are corresponding, and the giant magnetic resistance layer can vibrate along with the sensitive mass block along a direction perpendicular to the upper surface of the ferromagnetism film. According to the micromachined gyroscope of the present invention, the whole structure design is adopted, the structure is reasonable and compact, circuit detection is simple, the use is convenient, reliability is good, and the gyroscope is applicable for miniaturization.

Description

technical field [0001] The invention relates to the related field of micro-inertial navigation technology, in particular to a silicon-based micromechanical gyroscope with tunnel magnetoresistance effect. Background technique [0002] At present, the commonly used detection methods of micromechanical gyroscopes are capacitive and piezoresistive. The piezoresistive type is realized based on the principle of piezoresistive effect of highly doped silicon. The pressure sensitive device formed by highly doped silicon has a strong temperature Dependence, the bridge detection circuit composed of pressure sensitive devices will also cause sensitivity drift due to temperature changes; the improvement of capacitive precision is to increase the capacitance area, due to the miniaturization of the device, its accuracy is due to the reduction of the effective capacitance area and difficult to improve. [0003] The measurement of the angular velocity of the micromechanical gyroscope is com...

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Application Information

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IPC IPC(8): G01C19/5733
Inventor 李孟委李锡广刘俊刘双红王莉石云波
Owner ZHONGBEI UNIV
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