Photoetching method for grating aided nano imaging

Abstract

The invention provides a photoetching method for grating aided nano imaging. A nano object or a nano graphical mask is positioned in an object side region; an object side grating is placed in front of the nano object or the nano graphical mask and is used for converting a high-frequency evanescent wave into a transmission wave; an optical imaging lens group is arranged in a far field region outside the object side grating and is used for distributing, projecting and imaging the optical field; an image side grating is arranged on the other side of the optical imaging lens group and is used for converting the transmission wave into the high-frequency evanescent wave; and finally an imaging region below the image side grating is imaged. According to the photoetching method, the two gratings are used for converting the transmission wave and the evanescent wave; furthermore, the optical imaging lens group is used for distributing, projecting and imaging the optical field, so that the image of a sub-wavelength scale is obtained; the near field limitation of the conventional super-diffraction material is eliminated; an object and image space position relation can be in a far field range, and a visual field is not limited by factors such as the loss of the super-diffraction material and the processing difficulty; and the visual field can be expanded to a size which is the same as that of the visual field of the conventional imaging optical system.

Description

technical field [0001] The invention belongs to the field of super-resolution microscopic imaging and lithography, and relates to a super-resolution imaging lithography method which utilizes an optical imaging lens group to project light field distribution, and utilizes a grating to realize the transformation of transmission waves into evanescent waves. Background technique [0002] With the continuous miniaturization of semiconductor devices, the realization of nanoscale imaging lithography has become a bottleneck in the development of information science. In recent years, a super-resolution imaging device hyperlens based on artificial electromagnetic materials has been proposed, which can realize the transmission of evanescent waves, thereby obtaining super-resolution imaging lithography. However, this device has many application problems: first, the device is limited by near-field imaging, and the position of the object and the image is in a near-field relationship, which...

AI Technical Summary

Problems solved by technology

[0003] The technical problem to be solved by the present invention is: to overcome the shortcomings of conventional superdiffraction imaging lithography devices such as near-field limitation of the object image position, small field of view, and difficult processing, and proposes to use object-space gratings and image-space gratings to realize the connection between the propagating wave and the evanescent wave. The transformation between, using the optical imaging lens group to realize the projection imaging lithography method of the light field distribution

Images