Solid-state imaging device, electronic device, and manufacturing method for solid-state imaging device
A solid-state imaging device and voltage technology, which is applied to electric solid-state devices, radiation control devices, components of color TVs, etc., to achieve the effect of suppressing blooming or color mixing
Active Publication Date: 2013-01-09
SONY SEMICON SOLUTIONS CORP
View PDF8 Cites 18 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Therefore, in the back-illuminated CMOS image sensor, it is difficult to pass the Figure 20 The N-type substrate region is provided in the light incident side region of the photodiode 601 in the same manner as the front illuminated CMOS image sensor shown in
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
no. 1 example
[0044] 1. First Embodiment: Example of Basic Configuration
no. 2 example
[0045] 2. Second Embodiment: Configuration Example of Adjusting the Work Function of the Transfer Gate
no. 3 example
[0046] 3. Third Embodiment: An Example of Constructing a Transfer Gate Using a Vertical Transfer Gate
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
In a manufacturing method for a solid-state imaging device, a photoelectric conversion portion including a first impurity layer whose carrier polarity is a first conductivity type is formed within a substrate, a second impurity layer, whose carrier polarity is a second conductivity type opposite to the first conductivity type, is formed on a surface of the first impurity layer so as to be in contact with the surface located on one surface side of the substrate, a third impurity layer, whose carrier polarity is the first conductivity type, is formed on the second impurity layer so as to be in contact therewith, a gate electrode is formed above the third impurity layer so as to cover the third impurity layer, and an impurity region portion, whose carrier polarity is the first conductivity type, is formed within the substrate so as to be connected to the third impurity layer.
Description
[0001] Cross References to Related Applications [0002] This application contains subject matter related to that disclosed in Japanese Priority Patent Application JP 2011-148882 filed in Japan Patent Office on Jul. 5, 2011, the entire content of which is hereby incorporated by reference. technical field [0003] Embodiments of the present invention relate to a solid-state imaging device, electronic equipment incorporating the solid-state imaging device, and a method of manufacturing the solid-state imaging device. Background technique [0004] Conventionally, as a solid-state imaging device, there has been an active pixel sensor (active pixel sensor, APS) in which each pixel is equipped with an amplification element. In recent years, among these active pixel sensors, complementary MOS (CMOS) image sensors that read signal charges accumulated in photodiodes as photoelectric conversion elements through metal-oxide-semiconductor (MOS) transistors Has been used for many purpos...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H04N5/374H04N5/225
CPCH04N5/3745H01L27/1461H04N5/225H01L27/146H04N5/374H04N5/3592H01L27/14689H01L27/14616H04N25/622H04N25/77H01L27/14656
Inventor 大理洋征龙
Owner SONY SEMICON SOLUTIONS CORP