A kind of white light led device with fluorescent powder layer and manufacturing method thereof
A technology of LED devices and phosphor layers, which is applied in semiconductor devices, electric solid devices, electrical components, etc., can solve the problems of reducing yield and increasing the cost of light sources, and achieves the effect of reducing process costs and process steps
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0040] like image 3 As shown, this embodiment discloses a white light LED device with a phosphor powder layer, including a LED chip with a positive mounting structure, and a passivation layer 404 is arranged on the light-emitting surface of the LED chip, and the passivation layer 404 is composed of phosphor powder and colloid Prepared by mixing, the colloid is a curable transparent insulating medium liquid colloid.
[0041] like image 3 As shown, its specific structure includes an epitaxial substrate 300, an N-type GaN layer 301, an active layer 302, a P-type GaN layer 303, a transparent conductive layer 401, a P electrode 402, an N electrode 403, and a passivation layer 404. . Wherein, the N-type gallium nitride layer 301 is arranged on the epitaxial substrate 300, and the upper surface of the N-type gallium nitride 301 presents two platforms with different heights; wherein, the active layer 302 is arranged on the N-type The high platform surface of the gallium nitride l...
Embodiment 2
[0055] like Figure 4 As shown, this embodiment discloses a white light LED device with a phosphor layer. The difference between this embodiment and Embodiment 1 is that a chip pattern 405 for improving the light-emitting performance of the LED is etched on the passivation layer 404. .
[0056] These graphics for improving light extraction performance can be circular holes, lines or other irregular graphics, and these graphics produced on the chip can improve the light extraction efficiency of the chip and adjust the light output angle of the chip. Moreover, since the passivation layer and the fluorescent powder are integrated in the present invention, the change of these patterns can also change the color temperature of the white LED.
[0057] The method of this embodiment is different from that of Embodiment 1 in that: in the step (5) of Embodiment 1, photolithography exposes the P electrode connection region and the N electrode connection region, and at the same time, phot...
Embodiment 3
[0064] like Figure 5 As shown, this embodiment discloses a white light LED device with a phosphor layer. The difference between this embodiment and Embodiment 1 is that a protective layer 406 is wrapped on the passivation layer 404, and the protective layer 406 is a silicon dioxide layer or a silicon nitride layer.
[0065] On the basis of Embodiment 1, a protective layer 406 can be formed on the upper and lower sides of the passivation layer to cover the passivation layer. The material of the protective layer can be SiO2 (silicon dioxide) or Si3N4 (silicon nitride). The protective layer is made by PECVD method.
[0066] This embodiment method is different from embodiment 1 in that:
[0067] Between the step (3) and the step (4), it also includes depositing a protection layer 406 under the passivation layer 404 ;
[0068] Between the step (4) and the step (5), it also includes depositing a protective layer 406 on the passivation layer 404; the protective layer is made of s...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More