Method for preparing non-polar A face GaN thin film

Abstract

The invention provides a method for preparing a non-polar A face GaN thin film. The method comprises the following steps of: preparing an A face ZnO buffering thin film on the surface of a substrate; and preparing the non-polar A face GaN thin film on the prepared A face ZnO buffering thin film. According to the method disclosed by the invention, lattice mismatch and heat lattice mismatch between GaN and the substrate can be coordinated by a ZnO buffering layer, so that the crystallization quality of the prepared GaN thin film is greatly improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor film preparation, in particular to a method for preparing a non-polar A-plane GaN film. Background technique [0002] Gallium Nitride (GaN) belongs to the third generation of semiconductor materials and has a hexagonal wurtzite structure. It is the core component of light-emitting diodes, short-wavelength lasers, ultraviolet detectors and high-temperature and high-power devices in semiconductor lighting. Metals are generally used in industry prepared by organic chemical vapor deposition (MOCVD). [0003] There is a lack of natural GaN bulk single crystal materials in nature, and the current work is mainly carried out on heterogeneous epitaxy on sapphire, SiC, Si and other substrates. Due to the lattice mismatch and thermal mismatch between GaN and the substrate, there is a high dislocation density in the heteroepitaxial GaN film, resulting in a greatly increased strain and stress, which gre...

AI Technical Summary

Problems solved by technology

However, it is difficult to obtain an A-GaN thin film with excellent crystal quality and flat surface using traditional GaN buffer layer technology

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