LED chip with DBR (distributed Bragg reflector) type current blocking layer and production method of LED chip

A current blocking layer, LED chip technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of low current utilization, weak adhesion, easy to fall off, etc., to improve current utilization, good insulation. Effect
CN102903802AInactive Publication Date: 2013-01-30SHANGHAI PN STONE PHOTOELECTRIC
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
SHANGHAI PN STONE PHOTOELECTRIC
Publication Date
2013-01-30
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention provides an LED chip with a DBR (distributed Bragg reflector) type current blocking layer and a production method of the LED chip. The production method includes the steps: firstly, providing a sapphire substrate, forming a luminous epitaxial layer on the upper surface of the sapphire substrate, etching a groove with a waved side wall and a flat bottom surface in a P-pad region of the luminous epitaxial layer, forming a dielectric DBR on the surface of the groove to serve as the current blocking layer, and enabling the current blocking layer to form a concave structure with a waved side wall and a flat bottom surface; secondly, forming a transparent conducting layer on the luminous epitaxial layer and the concave structure, and etching the transparent conducting layer to enable the concave structure and an N region to be exposed outside; and finally, producing a P-pad on the concave structure, and producing an N-pad on the N region so that the LED chip is produced. The problems that a current blocking layer and a highly reflective electrode are low in adhesion and easy to fall off, and an LED chip is light-absorbing of a P electrode, low in current utilization rate ant the like in the prior art can be solved.
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Description

technical field

[0001] The invention relates to an LED chip and a manufacturing method thereof, in particular to an LED chip with a DBR type current blocking layer and a manufacturing method thereof. Background technique

[0002] In the design and manufacture of LED chips, adding a current blocking layer (CBL, current blocking layer) directly under the P-pad in the LED chip can cut off the current originally flowing from the P-pad into the P-GaN layer, so that all the current flows first. Flow into the transparent conductive layer (TCL, Transparent contact layer), and then flow into the P-GaN layer directly below the transparent conductive layer through the transparent conductive layer; when no current blocking layer is added, part of the current flows from the P-pad to the transparent conductive layer first Then it flows into the P-GaN layer directly below the transparent conductive layer, and part of it directly flows into the P-GaN layer and quantum well directly below th...

Claims

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