LED chip with DBR (distributed Bragg reflector) type current blocking layer and production method of LED chip

Abstract

The invention provides an LED chip with a DBR (distributed Bragg reflector) type current blocking layer and a production method of the LED chip. The production method includes the steps: firstly, providing a sapphire substrate, forming a luminous epitaxial layer on the upper surface of the sapphire substrate, etching a groove with a waved side wall and a flat bottom surface in a P-pad region of the luminous epitaxial layer, forming a dielectric DBR on the surface of the groove to serve as the current blocking layer, and enabling the current blocking layer to form a concave structure with a waved side wall and a flat bottom surface; secondly, forming a transparent conducting layer on the luminous epitaxial layer and the concave structure, and etching the transparent conducting layer to enable the concave structure and an N region to be exposed outside; and finally, producing a P-pad on the concave structure, and producing an N-pad on the N region so that the LED chip is produced. The problems that a current blocking layer and a highly reflective electrode are low in adhesion and easy to fall off, and an LED chip is light-absorbing of a P electrode, low in current utilization rate ant the like in the prior art can be solved.

Description

technical field [0001] The invention relates to an LED chip and a manufacturing method thereof, in particular to an LED chip with a DBR type current blocking layer and a manufacturing method thereof. Background technique [0002] In the design and manufacture of LED chips, adding a current blocking layer (CBL, current blocking layer) directly under the P-pad in the LED chip can cut off the current originally flowing from the P-pad into the P-GaN layer, so that all the current flows first. Flow into the transparent conductive layer (TCL, Transparent contact layer), and then flow into the P-GaN layer directly below the transparent conductive layer through the transparent conductive layer; when no current blocking layer is added, part of the current flows from the P-pad to the transparent conductive layer first Then it flows into the P-GaN layer directly below the transparent conductive layer, and part of it directly flows into the P-GaN layer and quantum well directly below th...

AI Technical Summary

Problems solved by technology

[0007] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a method to solve the weak adhesion between the current blocking layer and the highly reflective electrode in the prior art, which is easy to fall off, and the P electrode of the LED chip absorbs light. , low current utilization, etc.

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