Device and method for measuring film thermoelectric performance parameters

A technology of thermoelectric properties and temperature measuring devices, which is applied in the direction of measuring devices, measuring electrical variables, measuring resistance/reactance/impedance, etc., can solve problems such as low measurement accuracy and insufficient film materials, and achieve small size and insensitive contact resistance , low cost effect

Inactive Publication Date: 2013-02-06
SHANGHAI UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Existing measuring devices and methods mainly have the following problems: 1. Most of them measure the electrical conductivity, thermal conductivity and Seebeck coefficient of the film in different ways, and the electrical conductivity is mostly carried out by using a four-wire system or a two-wire system Measurement, thermal conductivity is obtained by steady-state method or transient method, and the measurement of Seebeck coefficient is usually determined by the temperature difference method between two ends
This kind of evaluation of the overall thermoelectric performance (that

Method used

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  • Device and method for measuring film thermoelectric performance parameters
  • Device and method for measuring film thermoelectric performance parameters
  • Device and method for measuring film thermoelectric performance parameters

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] see Figure 1~Figure 3 , the measurement includes: temperature measuring device (2, 3, 4), data acquisition device (8), heat sink (1), current source (7), stage (5), computer (9), temperature control box (10) and a voltmeter (6), characterized in that: the sample to be tested is fixed on the stage (5); the first contact point (1′) of the sample to be tested is connected to the heat sink (1), and The second, third, and fourth contact points (2′), (3′), and (4′) are respectively connected to a temperature measuring device, and the power supply (11) is connected to the current source ( 7), the current source (7) is connected to the heat sink (1), the temperature measuring device a (2), the temperature measuring device b (3) and the temperature measuring device c (4) are connected to the voltmeter (6), the current source (7 ) and the voltmeter (6) are connected to the data acquisition device (8), and the output of the data acquisition device (8) is connected to the compute...

Embodiment 2

[0034] This embodiment is basically the same as the first embodiment, and the special feature is that: the film to be tested can be a uniform film or a non-uniform film, and can be of any shape. The temperature measuring devices (2, 3, 4) are Pt100, Pt10, Pt1000, Cu50 or Cu100 temperature measuring resistances, or thermocouples. The contact points are a series of contact points, and the number of the contact points is 4-20. The operation steps of the measurement are as follows:

[0035] 1) The sample needs to be cut into a shape similar to the stage (5);

[0036] 2) The first contact point (1') of the film sample to be tested is connected to the heat sink (1), and the second, third and fourth contact points (2', 3', 4') are respectively connected to a measuring Temperature resistance (2, 3, 4);

[0037] 3) Input current to the first and second contact points (1', 2'), measure the voltage between the third and fourth contact points (3', 4'), and then 1. Input current at the...

Embodiment 3

[0043] The method for measuring the thermoelectric performance parameters of the thin film uses the above-mentioned device for measuring the thermoelectric performance parameters of the thin film. The specific implementation steps of the method are:

[0044] 1) Prepare several film samples of different thicknesses to be tested, and cut out a square similar to the stage (5);

[0045] 2) One side of the film sample to be tested is connected to a heat sink, and the other three sides are respectively connected to a heating resistor and a thermocouple;

[0046] 3) Input the current to the first contact point (1') and the second contact point (2'), measure the voltage between the third contact point (3') and the fourth contact point (4'), and then 1. Input the current at the third contact point (1' and 3'), measure the voltage between the second and fourth contact point (2', 4'), and calculate the conductance of the sample to be tested according to the Vanderbilt equation Rate σ; ...

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Abstract

The invention relates to a device and a method for measuring film thermoelectric performance parameters. The device mainly comprises a temperature measuring resistor, a heat sink, a current source, a carrier, a data acquiring device, a computer, a temperature control box and a pressure gauge. A sample to be measured is fixed on the carrier, an edge of the sample to be measured is connected with the heat sink, and the rest edges of the sample to be measured are connected with the temperature measuring resistor. Current required by the measuring device is controlled by the current source, and various performance parameters of a film thermoelectric material is monitored and recorded in real time by the data acquiring device. The device and the method for measuring film thermoelectric performance parameters have the advantages that thermal conductivity coefficient, seebeck coefficient, electric conductivity coefficient and thermoelectric merit figure of film thermoelectric materials in different shapes can be measured by the same device, and measured thermoelectric merit figure and formula computing value can be compared. Four-wire system is adopted in the whole process of measuring, and affection of contact resistance is practically avoided. The device and the method for measuring film thermoelectric performance parameters is simple, convenient to operate, small in size, high in measuring accuracy and vast in testing functions.

Description

technical field [0001] The invention belongs to the technical field of material performance testing, and in particular relates to a device and method for measuring thermoelectric performance parameters of thin films, which can simultaneously measure thermal conductivity κ, electrical conductivity σ, Seebeck coefficient S and thermoelectric figure of merit ZT of thin film materials. Background technique [0002] The efficiency of thermoelectric materials is proportional to the dimensionless thermoelectric figure of merit: [0003] ZT= (1) [0004] In formula (1), S is the Seebeck coefficient, κ is the thermal conductivity, σ is the electrical conductivity, and T is the absolute temperature. The search for materials with improved thermoelectric properties requires simple and efficient characterization methods. Existing measuring devices and methods mainly have the following problems: 1. Most of them measure t...

Claims

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Application Information

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IPC IPC(8): G01N25/20G01R27/14
Inventor 胡志宇曾志刚林聪
Owner SHANGHAI UNIV
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