Manufacturing method of double stress thin film and semiconductor device

Abstract

The invention discloses a manufacturing method of a dual stress film and a semiconductor device. A carborundum film is deposited by adopting an azotic gas; plasma processing for the carborundum film is carried out by adopting a hydrocarbon; the steps of the deposit of the carborundum film and the plasma processing for the carborundum film are repeated till a carborundum film with target thickness is formed; the content of nitrogen in the carborundum film is reduced; reduction of exposure efficiency, which is caused by the invalidation of light resistance in a subsequent photoetching technology, is avoided, as a result, the risks of final stress target value and evenness are affected; and in addition, the carborundum film is radiated by UV (Ultraviolet) light, the carborundum film radiated by the UV light is changed into a tensile stress film from a crushing stress film, the problem that a silicon nitride film and the dual stress film cannot satisfy a demand of advanced devices for an RC delay is solved, and the problem of existing overlapped regions of a traditional dual stress film technology is avoided, thereby avoiding yield loss caused by the overlapped regions and enabling the technology to be simple and easy to implement.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a method for manufacturing a double stress film and a semiconductor device. Background technique [0002] With the development of CMOS semiconductor device technology and proportional size reduction, stress engineering plays an increasingly important role in semiconductor technology and device performance; the introduction of stress in CMOS devices is mainly to improve the carrier mobility of the device. Tensile stress in the channel direction (longitudinal) of CMOS devices is beneficial to NMOS electron mobility, while compressive stress is beneficial to PMOS hole mobility, and tensile stress in the channel width direction (transverse) is beneficial to the carriers of NMOS and PMOS devices. The mobility is beneficial, and the compressive stress in the vertical channel plane direction (out-of-plane) is beneficial to the electron mobility of the NMOS device, and the...

AI Technical Summary

Problems solved by technology

At present, for the problem of overlap, it is mainly through the adjustment of the dry etching process or consideration in the layout design to minimize the impact on the yield rate, but it increases the difficulty of process control

And none of the above methods can completely and effectively solve the problem

[0005] In addition, since NH 3 Nitrogen-containing reactive gases, so nitrogen (free nitrogen) inevitably exists in the silicon carbide film, free nitrogen overflows and reacts with the photoresist layer, poisoning the photoresist layer with nitrogen, which in turn affects the smooth progress of the subsequent process

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