Diffusing process of low-square resistance crystalline silicon cell

A crystalline silicon battery and diffusion process technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as being unfavorable to improve short-wave spectral response and open circuit voltage, and the depth of p-n junction is not large.

Inactive Publication Date: 2013-02-06
HUNAN RED SUN PHOTOELECTRICITY SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The surface concentration of the conventional low-resistance emitter is relatively large, but the depth of the p-n junction is not large, which is not conducive to improving the short-wave spectral response and open-circuit voltage

Method used

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  • Diffusing process of low-square resistance crystalline silicon cell
  • Diffusing process of low-square resistance crystalline silicon cell
  • Diffusing process of low-square resistance crystalline silicon cell

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Embodiment 1

[0036] In this embodiment, the diffusion furnace is selected from the 48th Research Institute of China Electronics Technology Group Corporation. There are five heaters in the diffusion furnace, which are divided into five temperature zones. This diffusion process is carried out under the premise of keeping other process steps unchanged. The first three steps of diffusion process are as follows (Table 3):

[0037] table 3:

[0038]

[0039] A three-step temperature-raising diffusion method is adopted, and the specific diffusion steps are as follows:

[0040] In the first step, the diffusion temperature is maintained at a low level, and the reaction rate is very slow, so as to realize pre-diffusion and deposit phosphorus source on the surface.

[0041] The second step is to increase the temperature and diffuse to promote the decomposition of the phosphorus source and the diffusion into the silicon, and at the same time increase the concentration of the phosphorus source on t...

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Abstract

The invention discloses a diffusing process of a low-square resistance crystalline silicon cell. The diffusing process of the low-square resistance crystalline silicon cell uses a conventional diffusing furnace, and prepares a low-square resistance cell with higher efficiency than that of a high-square resistance crystalline silicon cell by changing diffusing doping concentration distribution; and the diffusing process of the low-square resistance crystalline silicon cell can reduce dark saturation current of an emitter and front surface recombination velocity, can increase voltage of a short circuit and an open circuit, does not increase other cell preparation processes, and is a diffusion technology with a great developmental value.

Description

technical field [0001] The invention belongs to the field of diffusion processing in the preparation process of crystalline silicon batteries, and in particular relates to a diffusion process of low square resistance crystalline silicon batteries that can increase the adjustment space of a diffusion furnace process, reduce dependence on equipment performance and improve battery efficiency. Background technique [0002] At present, the photovoltaic market is still dominated by conventional crystalline silicon cells, and the cost performance of high-efficiency structural cells is still unable to compete with conventional cells. Improving the conversion efficiency of conventional cells is the common pursuit of all photovoltaic companies. [0003] The preparation of shallow-junction high-resistance emitter is an important way to improve the conversion efficiency of crystalline silicon cells. This process can not only reduce the front surface recombination to increase the open cir...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L21/223
CPCY02P70/50
Inventor 姬常晓刘文峰
Owner HUNAN RED SUN PHOTOELECTRICITY SCI & TECH
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