Dual-mode system used for film growth and control method of dual-mode system

A dual-mode system and thin film growth technology, which is applied in crystal growth, single crystal growth, single crystal growth, etc., can solve the problem that the growth methods cannot be completely integrated

Active Publication Date: 2013-02-13
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Abstract
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  • Claims
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Problems solved by technology

However, the two material growth methods cannot be fully integrated

Method used

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  • Dual-mode system used for film growth and control method of dual-mode system
  • Dual-mode system used for film growth and control method of dual-mode system
  • Dual-mode system used for film growth and control method of dual-mode system

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Embodiment Construction

[0046] Embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. It should be noted that, in the case of no conflict, the embodiments in the present application and the features in the embodiments can be combined arbitrarily with each other.

[0047] For a better understanding of the components and marks in the figure, please refer to figure 1 , first explain some components and labels in the figure, A is a mass flow controller (Mass Flow Controller), B is a fluid pipeline, C is a pipeline connection, and D is a non-pipeline connection. In addition, figure 2 and image 3 The middle arrow marks the fluid flow direction.

[0048] Please refer to figure 1 , the present invention discloses a dual-mode system for thin film growth, which includes a non-reactive gas source 10, a first reaction source 20, a second reaction source 30, a reaction Chamber 40 and control device. The control device controls the dual-mode sys...

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Abstract

The invention discloses a dual-mode system used for film growth and a control method of the dual-mode system. The dual-mode system comprises a non-reaction gas source, a first reaction source, a second reaction source, a reaction chamber with a rotary carrying platform, and a control device, wherein the control device controls mutual conversion of the system between two reaction modes; in the first reaction mode, the control device only provides two reaction sources to communicate with a fluid in the reaction chamber; in the second reaction mode, the control device controls the non-reaction gas source and the two reaction sources to communicate with the fluid in the reaction chamber; the two reaction sources form mutually spaced and sequentially arranged independent regions on the surface of the rotary carrying platform along the rotating direction of the rotary carrying platform through the isolation function of the non-reaction resource; and independent growth reaction occurs in the independent region formed by each reaction source. The dual-mode system disclosed by the invention has the advantage of realizing in-situ conversion of OCVD (Oxidative Chemical Vapor Deposition) and ALD (Atomic Layer Deposition) reaction modes, thereby eliminating contradiction between the maximum efficiency of raw materials used for deposition and the quality optimization of a deposited film.

Description

technical field [0001] The invention relates to the technical field of film growth, in particular to a dual-mode system for film growth and a control method thereof. Background technique [0002] Metal Organic Chemical Vapor Deposition (MOCVD) is a widely used vapor phase epitaxy growth technology. It is a method for preparing compound semiconductor thin film single crystals, and has great advantages in preparing thin-layer heterogeneous materials, especially in growing quantum wells and superlattices. MOCVD uses organic compounds of group II and group III elements and hydrides of group V and group VI elements as source materials, and performs vapor phase epitaxy on the substrate in a thermal decomposition reaction mode to grow group III-V and group II-VI compound semiconductors and thin-layer single crystals of multicomponent solid solutions. Metal-organic compounds are mostly liquids with high vapor pressure. Hydrogen, nitrogen or inert gas is used as carrier gas, and th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/44C23C16/455C23C16/458C30B25/02C30B29/38C30B29/40C30B29/48
Inventor 陈弘马紫光贾海强王文新江洋王禄李卫
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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