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Nanocomposite material and its use in optoelectronics

A shell material and nanoparticle technology, applied in nanotechnology, photovoltaic power generation, nanotechnology, etc., can solve the problem of quantum dot size reduction

Inactive Publication Date: 2013-02-27
COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0021] Apart from the fact that they can cause electrical transport problems, the main disadvantage of the current solutions is that when quantum dots of oxidic semiconductor material are consumed, the size of the quantum dots thereby decreases

Method used

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  • Nanocomposite material and its use in optoelectronics
  • Nanocomposite material and its use in optoelectronics
  • Nanocomposite material and its use in optoelectronics

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1a

[0089] Example 1a : Direct synthesis of functionalized germanium nanocrystals followed by annealing at 400-500°C

[0090] The method is the same as that of Example 1 above, except that Ge is used instead of Si.

Embodiment 2

[0091] Example 2 : ZnO / Ti / Si / Ti / ZnO multilayer annealed between 800 and 1000°C.

[0092] This time, it was a more conventional approach, consisting of alternately depositing very thin films: [ZnO(3nm) / Ti(1nm) / Si(3nm) / Ti(1nm) / ZnO(3nm)] repeated 30 times. For simplicity, Figure 7 Only the alternation of four films is shown in . The Ti film has the effect of reducing the atmosphere in the deposition chamber. The basic multilayer was repeated 30 times, producing an absorber approximately 330 nm thick.

[0093] Annealing causes the Si to be deposited in the form of elongated grains with perfect control of their height. The aforementioned silicon is protected by oxidation of titanium and maintains a semiconductor state.

Embodiment 2a

[0094] Example 2a : ZnO / Ti / Ge / Ti / ZnO multilayer annealed between 800 and 1000°C.

[0095] The method is the same as in Example 2 above, but Ge is used instead of Si.

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Abstract

Material comprising a matrix made of semiconducting or insulating, transparent material in which core / shell type nanoparticles are dispersed, the core of which consists of a semiconductor and the shell of which is formed from a material chosen from the oxides TiO2 and / or CeO2. These nanocomposite materials may especially be used as optoelectronic absorbers.

Description

technical field [0001] The present invention relates to novel nanocomposites, methods for the manufacture of the nanocomposites and applications of the nanocomposites, in particular as optoelectronic absorbers. In particular, the materials of the present invention can be used to fabricate photovoltaic cells or any type of photovoltaic system that uses absorber materials to convert photons into electrical current. [0002] The present invention relates to the field of optoelectronic components, ie to electronic components that emit light or interact with light. Background technique [0003] Photovoltaic cells are electronic components that generate electricity when exposed to light (photons). The resulting current depends on the incident light. The electricity generated depends on the lighting conditions. [0004] Photovoltaic cells are often incorporated in solar photovoltaic modules or solar panels, and their number varies based on the electrical power required. [0005...

Claims

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Application Information

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IPC IPC(8): H01L31/0264
CPCH01L21/02601H01L31/0384H01L31/035218H01L29/151H01L31/03845B82Y40/00H01L27/14683B82Y30/00Y02E10/50H01L31/0264H01L31/04
Inventor 艾蒂安·凯内尔
Owner COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
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