Unlock instant, AI-driven research and patent intelligence for your innovation.

Capacitor and its manufacturing method

A technology of capacitors and electrodes, applied in the field of capacitors and its manufacturing, can solve problems such as low operating voltage, increased DRAM cell density, and small capacitors

Active Publication Date: 2016-06-15
TAIWAN SEMICON MFG CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

On the other hand, in DRAM, the operating voltage is lower and the capacitor needs to be smaller to increase the DRAM cell density

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Capacitor and its manufacturing method
  • Capacitor and its manufacturing method
  • Capacitor and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] The making and using of embodiments of the present disclosure are discussed in detail below. It should be appreciated, however, that the embodiments provide many applicable inventive concepts that can be embodied in a wide variety of specific situations. The specific embodiments discussed are illustrative only, and do not limit the scope of the disclosure.

[0032]It should be understood that for system-on-chip (SoC) applications, different functional areas (circuits) such as mixed signal area, analog area, radio frequency (RF) area, dynamic random access memory (DRAM) area, logic area, Different function capacitors are required in static random access memory (SRAM) area). To reduce manufacturing cost and process complexity, all of these capacitors may be fabricated in a common process (eg, substantially simultaneously) in substantially the same level (eg, in the same metal layer). Therefore, all insulators in a capacitor have the same thickness and are formed from th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides a capacitor and a manufacturing method thereof. A system-on-chip (SOC) device includes a first capacitor in a first region, a second capacitor in a second region, and also includes a third capacitor in a third region and an additional any additional number of capacitors in the area. Capacitors can be of different shapes and sizes. A region may include more than one capacitor. Each capacitor in the region has a top electrode, a bottom electrode and a capacitor insulator. The top electrodes of all capacitors are formed in a common process while the bottom electrodes of all capacitors are formed in a common process. Capacitor insulators can have different numbers of sublayers, formed of different materials with different thicknesses. The point financing may be formed in an interlayer dielectric layer or an intermetal dielectric layer. A region may be a mixed signal region, an analog region, a radio frequency region, a dynamic random access memory region, or the like.

Description

[0001] This application is a continuation-in-part of US Patent Application Serial No. 12 / 618,021, entitled "Dual-Dielectric MIM Capacitors for System-on-Chip Applications," filed November 13, 2009, the entire contents of which are hereby incorporated by reference. This application claims priority to US Provisional Application No. 61 / 527,669, filed August 26, 2011, entitled "Capacitor and Method for Making Same," the entire contents of which are hereby incorporated by reference. technical field [0002] The present invention relates to the field of semiconductors, and more particularly, to capacitors and manufacturing methods thereof. Background technique [0003] Various capacitors are used in semiconductor devices, such as metal oxide semiconductor (MOS) capacitors, PN junction capacitors, polysilicon-insulator-polysilicon (PIP) capacitors, and metal-insulator-metal (MIM) capacitors. In particular, MIM capacitors provide reduced electrode impedance, which has a wide range o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L23/522H10N97/00
CPCH01L23/5223H01L2924/0002H01L28/40H01L28/60H10B12/09H10B10/00H10B10/18H01L2924/00H10B12/00
Inventor 涂国基江文铨王铨中
Owner TAIWAN SEMICON MFG CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com