Capacitor and its manufacturing method

Abstract

The present invention provides a capacitor and a manufacturing method thereof. A system-on-chip (SOC) device includes a first capacitor in a first region, a second capacitor in a second region, and also includes a third capacitor in a third region and an additional any additional number of capacitors in the area. Capacitors can be of different shapes and sizes. A region may include more than one capacitor. Each capacitor in the region has a top electrode, a bottom electrode and a capacitor insulator. The top electrodes of all capacitors are formed in a common process while the bottom electrodes of all capacitors are formed in a common process. Capacitor insulators can have different numbers of sublayers, formed of different materials with different thicknesses. The point financing may be formed in an interlayer dielectric layer or an intermetal dielectric layer. A region may be a mixed signal region, an analog region, a radio frequency region, a dynamic random access memory region, or the like.

Description

[0001] This application is a continuation-in-part of US Patent Application Serial No. 12 / 618,021, entitled "Dual-Dielectric MIM Capacitors for System-on-Chip Applications," filed November 13, 2009, the entire contents of which are hereby incorporated by reference. This application claims priority to US Provisional Application No. 61 / 527,669, filed August 26, 2011, entitled "Capacitor and Method for Making Same," the entire contents of which are hereby incorporated by reference. technical field [0002] The present invention relates to the field of semiconductors, and more particularly, to capacitors and manufacturing methods thereof. Background technique [0003] Various capacitors are used in semiconductor devices, such as metal oxide semiconductor (MOS) capacitors, PN junction capacitors, polysilicon-insulator-polysilicon (PIP) capacitors, and metal-insulator-metal (MIM) capacitors. In particular, MIM capacitors provide reduced electrode impedance, which has a wide range o...

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Problems solved by technology

On the other hand, in DRAM, the operating voltage is lower and the capacitor needs to be smaller to increase the DRAM cell density

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