Semiconductor chip, semiconductor emitting device and manufacturing methods for semiconductor chip and semiconductor emitting device

Abstract

The invention provides a semiconductor chip which comprises a substrate. A buffer layer, an n-type nitride layer, an emitting layer, a p-type nitride layer and a chip anode are sequentially stacked on the substrate, a chip cathode which encircles the buffer layer, the n-type nitride layer, the emitting layer, the p-type nitride layer and the chip anode is arranged on the peripheral edge of the substrate, and insulating layers are arranged between the chip cathode and the emitting layer and between the p-type nitride layer and the chip anode respectively. The invention further provides a manufacturing method for the semiconductor chip, a semiconductor emitting device comprising the semiconductor chip and a manufacturing method for the semiconductor emitting device. The semiconductor chip, the semiconductor emitting device and the manufacturing methods have the advantages that the cathode of the semiconductor chip is led out from a side of a chip structure, and the cathode and the anode are distributed in different planes, so that short circuit can be effectively prevented; and the semiconductor chip is encircled by the anode and the cathode to form a bowl, light is emergent from the sapphire substrate at a bowl opening, an output light path is greatly extended, and the emitting area is enlarged.

Description

technical field [0001] The invention belongs to the field of semiconductors, and in particular relates to a semiconductor chip, a semiconductor light-emitting device and a manufacturing method thereof. Background technique [0002] At present, white light LEDs with mainstream flip-chip structures are manufactured through multiple photolithography, and the positive and negative electrodes of the LED are vertically etched from the P layer. The chip with this structure is too close to the positive and negative electrodes, which affects the accuracy of the subsequent packaging process. The requirements are very high, and the positive and negative electrodes are too close to be short-circuited, and the process is difficult. At the same time, part of the quantum well will be etched away when the negative electrode is made, thus losing a large light-emitting area. Contents of the invention [0003] The purpose of the present invention is to provide a semiconductor chip, the negat...

AI Technical Summary

Problems solved by technology

[0002] At present, white light LEDs with mainstream flip-chip structures are manufactured through multiple photolithography, and the positive and negative electrodes of the LED are vertically etched from the P layer. The chip with this structure is too close to the positive and negative electrodes, which affects the accuracy of the subsequent packaging process. The requirements are very high, and the positive and negative electrodes are too close to be short-circuited, and the process is difficult. At the same time, part of the quantum well will be etched away when the negative electrode is made, which will lose a large light-emitting area.

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