Micro- machining gas sensor and method for making same

A gas-sensing element and micro-machining technology, applied in the field of gas-sensing sensors, can solve the problem that the components cannot be miniaturized, and achieve the effect of reducing the area of ​​the components, reducing the manufacturing cost, and simplifying the packaging process

Inactive Publication Date: 2008-08-13
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Aiming at the problem that an additional heating electrode or heating device needs to be made for the gas sensing element and the element cannot be miniaturized, the purpose of the present invention is to provide a micro-processed gas sensing element and its preparation method without using additional heating com

Method used

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  • Micro- machining gas sensor and method for making same
  • Micro- machining gas sensor and method for making same

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Experimental program
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Example Embodiment

[0017] The method for preparing the above-mentioned micro-machined gas sensor includes the following steps:

[0018] First, the microelectrodes are fabricated on the substrate after processing by micromachining technology. The micro-processing technology can use the existing technology, including: optical lithography, electron beam lithography, X-ray lithography, laser lithography, electrochemical etching, microparticle spraying, screen printing or film printing, etc. The technology of making the microelectrode conductive material can adopt the existing technology, including: ion sputtering, electron beam evaporation, thermal evaporation, vacuum arc plasma coating, thermal spraying or electrostatic spraying and so on.

[0019] Then, the above-mentioned substrate and microelectrodes are covered with a gas-sensitive material layer to prepare a substrate component. The gas-sensitive material layer can be prepared by using existing technologies, including sputtering, thermal evaporati...

Example Embodiment

[0021] Example 1

[0022] In this embodiment, a ceramic sheet with a thickness of 0.25 mm is used as the substrate 11, and the area of ​​the substrate unit is 1.5×1.5 mm 2 . The microelectrode 12 is a single pair of spaced-back line structure with a line width of 0.1 mm and a line spacing of 50 μm. The production method includes the following steps:

[0023] a. The substrate 11 is subjected to a pre-bake heat treatment on a hot plate for 30 minutes, and the pre-bake temperature is 120°C.

[0024] b. Use a Karl Suss R8 glue applicator to evenly spin-coat a layer of red (RZJ-390PG) positive photoresist on the surface of the substrate 11 at a rotation speed of 3000 rpm and a time of 60 seconds.

[0025] c. After the glue is applied, the substrate 11 is placed on a hot plate for baking, the temperature of the hot plate is 120° C., and the baking time is 120 seconds.

[0026] d. After baking, use the Karl Suss MA45 lithography machine to expose the sample to UV exposure for 15 seconds....

Example Embodiment

[0035] Example 2

[0036] The steps of this embodiment are basically the same as those of embodiment 1, except for step j. Preparation of gas-sensitive material layer 13: In this embodiment, a layer of nanowires whose main component is tungsten oxide is grown on the substrate electrode by the method of thermal evaporation to form Film structure.

[0037] The gas sensing characteristics of this embodiment are shown in Fig. 4. The gas sensor grown with nanostructured tungsten oxide material is resistant to 1% H under the condition of 2V DC power supply. 2 The response current varies with time. Where I represents the current flowing through the metal electrode, and t represents the time. When the device is in the air, the current value of the device is about 89mA. When hydrogen appears, the current value of the device starts to increase and reaches a stable value of about 120mA within 1 minute. When the hydrogen is discharged, the current of the device begins to decrease, and finally...

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Abstract

The present invention relates to a micro-machining gas sensor and preparation method thereof, which includes tube base, substrates parts and connected parts to connect the tube base and substrates parts. Wherein, the substrates parts comprises of substrates, microelectrode on the substrates, low resistant gas-sensing material layer coated on substrates and microelectrode from bottom to top. Interval microelectrode bar is made on substrates by micro-machining technics, and low resistant gas-sensing material layer is coated on the substrates and microelectrode to form substrates parts which is electrified to work in heat insulation state. Required working temperature obtained by joule heat produced by resistance in series and electrified microelectrode of gas sensor of present invention without adding heating electrode or heating device, the encapsulation techics of device and complexity of subsequent conditioning circuit are predigested, preparation cost is reduced and produce efficient is improved. The present invention is suit for batch produce, and shortened elements area of the present invention realizes gas sensor miniaturization and element power consumption reduced.

Description

technical field [0001] The invention belongs to the field of gas-sensitive sensors, and in particular relates to a micro-processed gas-sensitive sensor element and a preparation method thereof. Background technique [0002] At present, the structure of the gas sensing element is mainly ceramic tube type, microbead type, and planar type. Ceramic type and microbead type gas sensors are mainly made by hand, which has low production efficiency and poor consistency of component parameters. The planar gas sensing element can be combined with screen printing technology, which greatly improves the parameter uniformity rate, yield rate, and production efficiency of the element. At present, the existing planar gas sensing electrode structure mainly includes two parts: the heating electrode and the gas sensing signal reading electrode. The gas-sensing signal reading electrode is made on the other end face of the component substrate; the second is to directly prepare the two electrode...

Claims

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Application Information

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IPC IPC(8): G01N27/407
Inventor 许宁生朱联烽佘峻聪邓少芝陈军
Owner SUN YAT SEN UNIV
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