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Semiconductor device, temperature sensor and method of manufacturing semiconductor device

A technology of temperature sensors and semiconductors, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc.

Active Publication Date: 2015-09-30
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, a separate calibration is required

Method used

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  • Semiconductor device, temperature sensor and method of manufacturing semiconductor device
  • Semiconductor device, temperature sensor and method of manufacturing semiconductor device
  • Semiconductor device, temperature sensor and method of manufacturing semiconductor device

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Embodiment Construction

[0020] In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which are shown by way of example specific embodiments in which the invention can be practiced. In this regard, directional terms such as "top", "bottom", "front", "rear", "head", "tail", etc. are used with reference to the orientation of the figures being described. Because components of an embodiment may be positioned in many different orientations, directional terminology is used for purposes of illustration and not limitation. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. The following detailed description should therefore be read in a limiting sense, with the scope of the invention being defined by the appended claims. The embodiments described use specific language which should not be construed as limiting the scope of the app...

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Abstract

According to an embodiment, a semiconductor device includes a semiconductor substrate and an amorphous semi-insulating layer on the semiconductor substrate.

Description

technical field [0001] Embodiments described herein relate to semiconductor devices having an amorphous semi-insulating layer, temperature sensors having an amorphous semi-insulating layer, and methods of fabricating a plurality of semiconductor devices. Background technique [0002] Fast switching high voltage power devices, such as IGBTs (Insulated Gate Bipolar Transistors), are used to control inductive loads in converters for variable speed drives. Inductive loads are, for example, electric motors. These electrical devices are designed to cut off approximately 100V up to 6.5kV depending on the purpose of use. The converter includes a bridge circuit formed by power devices that are alternately turned on and off to produce an output voltage signal with the desired frequency. This is also known as Pulse Width Modulation (PWM). Multiple power units and their freewheeling diodes can be combined in modules for high voltage and high current applications. [0003] Electrical...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02G01K7/18
CPCH01L29/0696H01L2924/0002H01L29/861H01L28/22H01L29/7395H01L29/1604G01K7/18H01L29/408H01L29/7811H01L29/0692H01L2924/00
Inventor 格哈德·施密特
Owner INFINEON TECH AG
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