Unlock instant, AI-driven research and patent intelligence for your innovation.

Luminotron of electron beam pumping

A technology of electron beam and light-emitting tube, applied in the field of light source and electroluminescence, can solve the problems of energy waste, low conversion efficiency, low light intensity, etc.

Inactive Publication Date: 2013-03-20
SHANGHAI FOREALIGHT SCI & TECH
View PDF3 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional gas light source has poor conversion efficiency, there are a lot of messy parts in the spectrum, it is not good monochromatic light, and there is considerable energy waste
In addition, the traditional gas light source also has the problem of polluting the environment
Compared with traditional gas light sources, solid-state light sources based on solid-state light-emitting diodes (LEDs) have improved in some aspects, but they still have defects such as low conversion efficiency and low light intensity.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Luminotron of electron beam pumping
  • Luminotron of electron beam pumping

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] In order to make the technical means, creative features, goals and effects achieved by the present invention easy to understand, the present invention will be further described below in conjunction with specific diagrams.

[0029] refer to figure 1 , refer to figure 2 The luminous tube pumped by the electron beam includes an electroluminescent semiconductor mechanism 1, and a reflective metal layer 14 is deposited on the back of the electroluminescent semiconductor mechanism 1, and also includes an excitation source, and the excitation source adopts an electron gun system 2. The electroluminescent semiconductor structure 1 is arranged in the targeting direction of the electron gun system 2 . The electroluminescent semiconductor structure 1 comprises at least two stacked electroluminescent semiconductor layers 12 . The electroluminescent semiconductor structure can be connected to the electrodes via the reflective metal layer 14 .

[0030] The materials of these elec...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to the field of light sources, and particularly relates to the field of the electroluminescence. A luminotron of an electron beam pumping comprises an electroluminescent semiconductor mechanism and an excitation source, the electroluminescent semiconductor mechanism is generated on a reflecting metal layer, an electronic gun system is adopted by the excitation source, and the electroluminescent semiconductor mechanism is arranged in the target direction of the electronic gun system. The electroluminescent semiconductor mechanism comprises at least two layers of stacked electroluminescent semiconductor layers, and a semiconductor luminescent structure is composed of the two layers of stacked electroluminescent semiconductor layers. Two adjacent electroluminescent semiconductor layers are electroluminescent semiconductor layers with different forbidden band depths, so a structure of a potential energy trap or multiple potential energy traps is formed in an energy band structure of new formed materials, and therefore conversion efficiency is improved conveniently, and light wavelength is convenient to adjust. The potential energy trap structures are favorable for limiting the semiconductor conducting bands and current carriers on valence bands to a specific energy state, so that the purpose of improving the conversion efficiency is achieved.

Description

technical field [0001] The invention relates to the field of light sources, in particular to the field of electroluminescence. Background technique [0002] At present, there are mainly two types of practical light-emitting mechanisms: one is a traditional gas light source with gas electroglow as the light-emitting mechanism; the other is a solid light source based on a solid light-emitting diode (LED). Both light sources have very obvious drawbacks. The traditional gas light source has poor conversion efficiency, and there are a lot of messy parts in the spectrum, which is not a good monochromatic light, and there is a considerable waste of energy. In addition, traditional gas light sources also have the problem of polluting the environment. Compared with the traditional gas light source, the solid-state light source based on solid-state light-emitting diode (LED) has been improved in some aspects, but it still has the defects of low conversion efficiency and low light in...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01S5/04H01S5/34
Inventor 张学渊钟伟杰赵健夏忠平
Owner SHANGHAI FOREALIGHT SCI & TECH