Tunable microwave-absorbing artificial electromagnetic metamaterial based on topology/graphene

A technology of artificial electromagnetics and topological materials, applied in nonlinear optics, instruments, optics, etc.

Inactive Publication Date: 2013-04-03
DALIAN UNIV OF TECH
View PDF5 Cites 42 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Aiming at the above-mentioned problems of tunable wave-absorbing artificial electromagnetic metamaterials, the present invention provides a tunable wave-absorbing artificial electromagnetic metamaterial based on topological or graphene materials. The device has the advantages of simple structure, easy operation, and large operating frequency tuning range. features

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Tunable microwave-absorbing artificial electromagnetic metamaterial based on topology/graphene
  • Tunable microwave-absorbing artificial electromagnetic metamaterial based on topology/graphene
  • Tunable microwave-absorbing artificial electromagnetic metamaterial based on topology/graphene

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0028] First, a material growth process is used to form a multi-layer structure (metal layer 3-topological material or graphene layer 4-metal layer 3-oxide layer 5) 2 on the substrate 1, as attached figure 2 (a) Shown.

[0029] Secondly, deposit SiO on the multilayer structure 2 2 The film is used as a mask 6, as attached figure 2 (b) Shown.

[0030] Then, the designed periodic resonant unit array samples are converted to the mask through the mask process, as shown in the attached figure 2 (c) Shown. Among them, the design of the structure can use algorithms such as finite time domain difference method and finite element method.

[0031] Then, through an etching process, a periodic resonant unit array 7 is prepared on the 2 material, as attached figure 2 (d) Shown.

[0032] Finally, the mask 6 is removed to obtain a tunable absorbing artificial electromagnetic metamaterial 8, as attached figure 2 (e) Shown. Which is based on N (N> 1) The first structure of multi-layer structure ...

example 2

[0034] First, a material growth process is used to form a multi-layer structure (metal layer 3-dielectric layer 10-metal layer 3) 2 on the substrate 1, as shown in the attachment image 3 (a) Shown.

[0035] Secondly, deposit SiO on the multilayer structure 2 2 The film is used as a mask 6, as attached image 3 (b) Shown.

[0036] Then, the designed periodic resonant unit samples are transferred to the mask through the mask process, as shown in the attached image 3 (c) Shown. Among them, the structure design can use finite time domain difference method, finite element method and other algorithms.

[0037] Then, through an etching process, a periodic resonant unit array 7 is prepared on the 2 material, as attached image 3 (d) shown

[0038] Finally, the mask 6 is removed, and a graphene or topological material layer 4 is deposited on 2 to obtain a tunable absorbing artificial electromagnetic metamaterial 8, as attached image 3 (e) Shown. Which is based on N (N> 1) The second struct...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a tunable microwave-absorbing artificial electromagnetic metamaterial based on a topology/graphene material. Through the introduction of the topology material or the graphene material into the microwave-absorbing artificial electromagnetic metamaterial, the resonant frequency corresponding to an absorption peak is changed, so that the frequency band of an absorption spectrum is tunable; and therefore, the problem that the frequency band of the microwave-absorbing artificial electromagnetic metamaterial is too narrow and untunable is solved. With the adoption of the tunable microwave-absorbing artificial electromagnetic metamaterial based on the topology/graphene material, the dielectric coefficient and the surface resistivity of the topology material or the graphene material can be changed through control on an external electric field, temperature or thickness of the topology material or the graphene material; and in such a way, the microwave-absorbing artificial electromagnetic metamaterial with the tunable working frequency band is further realized.

Description

Technical field [0001] The invention relates to a tunable wave-absorbing artificial electromagnetic metamaterial based on topology and graphene materials, and has broad application prospects in many fields. Background technique [0002] Artificial electromagnetic metamaterial is a kind of man-made medium that does not exist in nature. It uses sub-wavelength microstructures as the atomic molecules of similar material components. Because of its unique electromagnetic properties, such as negative refractive index effect, Negative permeability effects, strong circular dichroism, electromagnetic stealth, inverse Doppler effect, inverse Cherenkov radiation, amplified evanescent waves, wave-absorbing artificial electromagnetic metamaterials, etc. have received extensive attention. Among them, the research of absorbing artificial electromagnetic metamaterials has achieved great results in recent years, but there are still many key technical problems to be solved, such as how to broaden a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/01
Inventor 曹暾
Owner DALIAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products