Method for manufacturing metal silicide thin film and ultra-shallow junction and semiconductor device
A technology of metal silicide and its manufacturing method, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., and can solve problems such as impurity diffusion
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[0021] In order to make the object, technical solution and advantages of the present invention clearer, various embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. However, those of ordinary skill in the art can understand that, in each implementation manner of the present invention, many technical details are provided for readers to better understand the present application. However, even without these technical details and various changes and modifications based on the following implementation modes, the technical solution claimed in each claim of the present application can be realized.
[0022] The first embodiment of the present invention relates to a method for fabricating a metal silicide thin film and an ultra-shallow junction. The specific process is as follows figure 1 shown, including the following steps:
[0023] Step 101, providing a semiconductor substrate 201, such as Figure 2A Shown; the semic...
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