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Compound semiconductor device and method of manufacturing the same

A technology of semiconductors and compounds, which is applied in the field of compound semiconductor devices and their manufacturing, and can solve problems such as degradation of device characteristics

Inactive Publication Date: 2013-04-03
FUJITSU LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, an increase in the operating voltage for a larger output increases the electric field strength around the gate electrode, causing deterioration of device characteristics (chemical and / or physical changes)

Method used

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  • Compound semiconductor device and method of manufacturing the same
  • Compound semiconductor device and method of manufacturing the same
  • Compound semiconductor device and method of manufacturing the same

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Experimental program
Comparison scheme
Effect test

no. 1 approach

[0025] The present embodiment discloses a Schottky AlGaN / GaN-based HEMT as a compound semiconductor device.

[0026] Figure 1A to Figure 4B is a schematic cross-sectional view showing step by step the method of manufacturing the Schottky AlGaN / GaN-based HEMT of the first embodiment.

[0027] First, if Figure 1A As shown, compound semiconductor layer 2 is usually formed on semi-insulating SiC substrate 1 serving as a growth substrate. The compound semiconductor layer 2 has a stacked structure of compound semiconductor layers and is composed of a buffer layer 2a, a channel layer 2b, an intermediate layer 2c, a supply layer 2d, and a cap layer 2e. In the AlGaN / GaN-based HEMT, a two-dimensional electron gas (2DEG) is formed in the vicinity of the interface with the supply layer 2d (more precisely, with the intermediate layer 2c) in the channel layer 2b.

[0028] In more detail, each compound semiconductor described below is grown on SiC substrate 1 generally by metal organic ...

no. 2 approach

[0083] A Schottky AlGaN / GaN-based HEMT of a second embodiment will be described below. This embodiment differs from the first embodiment in the mode of the protective portion corresponding to the second protective film in the first embodiment. Note that all the same components as those in the AlGaN / GaN-based HEMT of the first embodiment will be given the same reference numerals in order to avoid duplication of description.

[0084] Figures 9A to 9C , Figure 10A with Figure 10B is a schematic cross-sectional view showing main steps of manufacturing the Schottky AlGaN / GaN-based HEMT according to the second embodiment.

[0085] First, with the previous in the first embodiment of the Figure 1A to Figure 2A In accordance with the steps shown in , the first protective film 6 is formed over the entire surface of the compound semiconductor layer 2 . Figure 9A The state of process completion is shown in .

[0086] Next, if Figure 9B As shown, a protective region 6 b is for...

no. 3 approach

[0103] The present embodiment discloses a power supply equipped with any one type of AlGaN / GaN-based HEMT selected from the first embodiment and its modified examples, and the second embodiment.

[0104] Figure 11 is a connection diagram showing the general configuration of the power supply of the third embodiment.

[0105]The power supply in this embodiment is composed of a high-voltage primary circuit 21 , a low-voltage secondary circuit 22 and a transformer 23 arranged between the primary circuit 21 and the secondary circuit 22 .

[0106] The primary circuit 21 is constructed by an AC (Alternating Current) power source 24, a so-called bridge rectification circuit 25 and a plurality (in this case, four) of switching elements 26a, 26b, 26c, 26d. The bridge rectifier circuit 25 has a switching element 26e.

[0107] The secondary circuit 32 is configured by a plurality of (in this case, three) switching elements 27a, 27b, 27c.

[0108] In this embodiment, the switching elem...

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Abstract

Disclosed is a compound semiconductor device in which a first protective film, which is homogeneous and composed of a single material (SiN, in this case) and therefore has a uniform dielectric constant, continuously covers a compound semiconductor layer; an oxygen-containing protective component, which is a second protective film composed of an oxide film, is formed so as to cover one edge portion of an opening formed in the first protective film; and a gate electrode is formed so as to fill the opening and so as to embrace therein the second protective film.

Description

technical field [0001] Embodiments discussed herein relate to compound semiconductor devices and methods of manufacturing the same. Background technique [0002] Nitride-based semiconductor devices characterized by high saturation electron velocities and wide band gaps have been vigorously developed in anticipation of semiconductor devices for high-voltage and high-output applications. Among nitride-based semiconductor devices, field effect transistors, especially high electron mobility transistors (HEMTs), have been studied in numerous reports. In particular, AlGaN / GaN-based HEMTs using GaN as a channel layer and AlGaN as a supply layer have attracted public attention. In the AlGaN / GaN-based HEMT, strain is generated in AlGaN due to the difference in lattice constant between GaN and AlGaN. Due to the piezoelectric polarization induced by the strain and the spontaneous polarization of AlGaN, a high-density two-dimensional electron gas (2DEG) is obtained, so that a high-vol...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/778H01L29/51H01L21/335H01L21/28H02M5/10H03F3/189
CPCH01L21/28581H01L21/28593H01L29/66462H01L29/7787H01L29/2003H02M1/4225H02M3/33592Y02B70/10
Inventor 牧山刚三吉川俊英
Owner FUJITSU LTD