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X-ray radiation detector for ct system

A technology for radiation detectors and X-rays, applied in the field of direct conversion X-ray radiation detectors, can solve the problems of incomplete measurement results and detector efficiency limitations, and achieve the effects of low cost and small heat loss power

Active Publication Date: 2013-04-03
SIEMENS HEALTHCARE GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The efficiency of the detector is greatly limited by this
The high radiation density is therefore not directly and losslessly converted into electrical pulses, so that the use of direct-conversion semiconductor detectors in CT systems still does not fully provide accurate measurement results

Method used

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  • X-ray radiation detector for ct system
  • X-ray radiation detector for ct system
  • X-ray radiation detector for ct system

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Embodiment Construction

[0036] Figure 1 to Figure 4 A diagram of the different work functions of the contact material KM, the intermediate material Z and the semiconductor material HL for an ideal ohmic contact constructed according to the invention is shown in each case in different embodiments. On the ordinate is the work function W in eV and on the abscissa is the position coordinate x. Compound semiconductor CdTe and metal Pt are used as the semiconductor material HL and the contact material KM, respectively. The semiconductor material HL and the contact material KM respectively have a carrier work function W HL and W KM , where the work function W KM Greater than work function W HL .

[0037] According to the invention, an intermediate layer consisting of an intermediate material Z is inserted between the semiconductor material HL and the contact material KM. Furthermore according to the present invention, the work function W of the intermediate material Z Z The work function W of the sem...

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Abstract

The present invention relates to an X-ray radiation detector, particularly the X-ray radiation detector used for a CT system. The X-ray radiation detector is provided with semiconductor material for detection, preferably compound semiconductor. Furthermore the X-ray radiation detector contacts with at least one resistor between the semiconductor material (HL) and contact material (KM), wherein the semiconductor material (HL) and the contact material (KM) respectively have a carrier work function (WHL,WKM). The X-ray radiation detector is characterized in that: an intermediate layer which is composed of intermediate material (Z) is inserted between the semiconductor material (HL) and the contact material (KM), wherein the work function (WZ) of the intermediate material (Z) is between the work function (WHL) of the semiconductor material (HL) and the work function (WKM) of the contact material (KM). Besides, the invention also relates to a CT system in which the X-ray radiation detector is used. The CT system advantageously contacts with at least one ideal resistor according to the invention.

Description

technical field [0001] The invention relates to a direct conversion X-ray radiation detector, in particular for a CT system, having at least a semiconductor material for detection, preferably a compound semiconductor, and between the semiconductor material and a contact material at least one ohmic contact, wherein the semiconductor material and the contact material each have a carrier work function. Background technique [0002] Scintillation detectors or direct conversion semiconductor detectors are used to detect gamma-ray and X-ray radiation, especially in CT systems and dual-energy CT systems. In scintillation detectors, incident radiation is detected indirectly through electronic excitation and conversion into photons. Direct conversion detectors based here on semiconductor materials such as CdTe, CdZnTe, CdZnSe and CdZnTeSe are able to count individual photons and thus directly detect radiation. In this case, the semiconducting detector material is electrically condu...

Claims

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Application Information

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IPC IPC(8): H01L31/0352H01L31/08H01L31/115
CPCG01T1/24H01L31/0224H01L31/115
Inventor F.迪尔M.斯特拉斯伯格
Owner SIEMENS HEALTHCARE GMBH
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