Film formation equipment and substrate processing equipment
A technology for a substrate processing device and a film-forming device, which can be applied to gaseous chemical plating, coatings, electrical components, etc., and can solve problems such as reduced film thickness uniformity
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no. 1 Embodiment approach
[0046] refer to Figure 1 ~ Figure 3 The film forming apparatus 1 according to the embodiment of the present invention will be described. figure 1 , figure 2 and image 3 These are a longitudinal side view, a schematic cross-sectional perspective view, and a transverse cross-sectional plan view of the film forming apparatus 1 . This film forming apparatus 1 forms a thin film by laminating a reaction product on the surface of a wafer W by the ALD method, and performs plasma modification on the thin film. The film forming apparatus 1 includes a substantially circular flat vacuum vessel 11 and a circular turntable 2 horizontally provided in the vacuum vessel 11 . The surrounding of the vacuum container 11 is an air atmosphere, and the inner space of the vacuum container 11 is formed into a vacuum atmosphere during the film forming process. The vacuum vessel 11 is composed of a top plate 12 and a vessel main body 13 , and the vessel main body 13 constitutes the side walls and...
no. 2 Embodiment approach
[0081] Next, the second embodiment will be described focusing on differences from the first embodiment. Figure 12 It is a perspective view of the plasma generating part 8 of the second embodiment, Figure 13 and Figure 14 is a side view of the plasma generating unit 8 . In this plasma generation unit 8, an L-shaped angle adjustment member 81 in a side view is provided on the insulating member 59 at a position close to the outer peripheral portion of the turntable 2, and the L-shaped vertical portion 82 is fixed to the The vertical plate 53 of the Faraday shield 51 . A notch 84 is formed on the lower side of the L-shaped horizontal portion 83 , and the metal wire of the lowermost layer on the outer peripheral portion side of the coil electrode 45 passes through the notch 84 and is sandwiched between the insulating member 59 and the horizontal portion 83 . between. and, if Figure 13 , Figure 14 As shown, the antenna 44 is configured to be rotatable around the metal wir...
no. 3 Embodiment approach
[0085] The plasma generation unit 9 of the third embodiment adjusts the inclination of the antenna 44 in the vertical direction as in the second embodiment. Figure 15 is a perspective view of the plasma generating unit 9, Figure 16 and Figure 17 is a side view of the plasma generating unit 9 . The antenna 44 is provided with four interval adjustment members 91 and a lifting member 92 each formed in a block shape. Three holes are provided in the space adjusting member 91 and the lifting member 92 at intervals in the vertical direction, and the metal wire constituting the antenna 44 is inserted into the holes and wound to form the coil electrode. 45, it is possible to prevent the metal wires of each layer from contacting each other when changing the angle of the antenna 44. This interval adjusting member 91 can also be used for the antenna 44 of other embodiments.
[0086] Similarly to the second embodiment, the Faraday shield 51 is provided with an angle adjustment membe...
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Abstract
Description
Claims
Application Information
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