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Chemical mechanical polishing method and chemical mechanical polishing equipment

A technology of chemical machinery and equipment, which is applied in the field of semiconductor manufacturing, can solve the problems of low cleaning efficiency of the wafer surface, and achieve the effects of improving product quality, reducing scratches, and reducing defects

Active Publication Date: 2016-07-06
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0016] The inventors of the present invention have found that there is a problem of low cleaning efficiency on the wafer surface in the above-mentioned prior art, and therefore propose a new technical solution for the problem

Method used

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  • Chemical mechanical polishing method and chemical mechanical polishing equipment
  • Chemical mechanical polishing method and chemical mechanical polishing equipment
  • Chemical mechanical polishing method and chemical mechanical polishing equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0076] image 3 It is a flow chart of a method of performing chemical mechanical polishing according to Embodiment 1 of the present invention. Such as image 3 As shown, the chemical mechanical polishing method according to Embodiment 1 of the present invention includes:

[0077] S301, spray cleaning liquid onto the surface of the wafer to perform spray cleaning on the surface of the wafer.

[0078] S302, performing chemical mechanical polishing on the wafer.

[0079] According to the chemical mechanical polishing method of Embodiment 1 of the present invention, spray cleaning is performed before chemical mechanical polishing, which can effectively remove the pollutants brought by the wafer in various previous processes, and avoid introducing pollutants into the chemical mechanical polishing process. , and reduce the scratches caused by pollutants on the wafer surface.

Embodiment approach 2

[0081] Figure 4 It is a flowchart of a method for performing chemical mechanical polishing according to Embodiment 2 of the present invention. Such as Figure 4 As shown, the chemical mechanical polishing method according to Embodiment 2 of the present invention includes:

[0082] S401, performing chemical mechanical polishing on the wafer.

[0083] S402, spray cleaning liquid onto the surface of the wafer to perform spray cleaning on the surface of the wafer.

[0084] According to the chemical mechanical polishing method according to Embodiment 2 of the present invention, spray cleaning is performed after chemical mechanical polishing, which can effectively remove the residue left on the wafer after the chemical mechanical polishing process, and prevent the residue from affecting subsequent processes.

Embodiment approach 3

[0086] Figure 5 It is a flowchart of a method for performing chemical mechanical polishing according to Embodiment 3 of the present invention. Such as Figure 5 As shown, the chemical mechanical polishing method according to Embodiment 3 of the present invention includes:

[0087] S501, performing chemical mechanical polishing on the wafer for the first time.

[0088] S502, spray cleaning liquid onto the surface of the wafer to perform spray cleaning on the surface of the wafer.

[0089] S503, performing chemical mechanical polishing on the wafer for the second time.

[0090] The chemical properties of the slurry used in the second chemical mechanical polishing and the slurry used in the first chemical mechanical polishing, such as acidity and alkalinity, can be the same. At this time, for example, the first chemical mechanical polishing and the second chemical mechanical polishing may be used to remove the same material deposited on the wafer. The first time for a coars...

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Abstract

The invention discloses a chemical machinery polishing method and a chemical machinery polishing device. A jetting system is arranged at one side of a polishing platform. Before or after chemical machinery polishing is carried out or during two times of chemical machinery polishing on the polishing platform, the surface of a wafer is sprayed and cleaned by jetting cleaning fluid on the surface of the wafer. According to embodiment of the chemical machinery polishing method and the chemical machinery polishing device, due to the fact that the cleaning liquid is jetted on the wafer, cleaning strength is increased, so that cleaning efficiency of the wafer is obviously improved and residuum on the surface of the wafer is effectively removed.

Description

technical field [0001] The invention relates to semiconductor manufacturing technology, in particular to a chemical mechanical polishing method and chemical mechanical polishing equipment. Background technique [0002] The chemical mechanical polishing technology is a combined technology of mechanical grinding and chemical etching, which forms a smooth and flat surface on the surface of the wafer through the grinding action of the slurry and the chemical etching action. Chemical mechanical polishing technology has become one of the mainstream technologies for global planarization of semiconductor devices. For example, a typical logic device manufacturing process includes seven interlayer dielectric chemical mechanical polishing processes, seven metal chemical mechanical polishing processes, and one shallow trench isolation chemical mechanical polishing process. [0003] A complete chemical mechanical polishing process is mainly completed by polishing, cleaning and metrologi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/304B24B37/34B24B37/04B08B3/02
Inventor 邵群王庆玲
Owner SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP