Semiconductor device and manufacturing method thereof
A technology for semiconductors and devices, applied in the field of semiconductor devices with strained structures, can solve the problems of increasing device instability and/or device failures, and it is difficult to improve the carrier mobility of semiconductor devices.
Active Publication Date: 2016-02-24
TAIWAN SEMICON MFG CO LTD
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- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
For example, increasing carrier mobility in semiconductor devices is difficult to achieve because strained materials cannot transfer a given amount of strain into the channel region of the semiconductor device, thereby increasing the likelihood of device instability and / or device failure
Method used
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[0022] It is understood that the following disclosure provides many different embodiments, or examples, for implementing various elements of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. These are of course merely examples and are not intended to be limiting. For example, the formation of the first component on or on the second component in the following description may include embodiments in which the first component and the second component are formed in direct contact, and may also include embodiments in which the first component and the second component may be formed in direct contact. An embodiment in which an additional part is formed between the second part so that the first part and the second part may not be in direct contact. Furthermore, the present invention may repeatedly refer to numerals and / or letters in each example. This repetition is for the purposes of brevity and clarity, and does ...
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Abstract
A method for manufacturing a semiconductor device is disclosed. A strained material is formed in the cavity of the substrate and adjacent to the isolation structures in the substrate. The strained material has corners above the surface of the substrate. The disclosed method provides an improved method for forming a strained material adjacent to an isolation structure and having an increased portion in a substrate cavity, thereby enhancing carrier mobility and improving device performance. In an embodiment, an etching process is used to redistribute the strained material within the chamber by removing at least a portion of the corners, thereby enabling an improved formation method. The present invention provides a semiconductor device and a manufacturing method thereof.
Description
technical field [0001] This invention relates to integrated circuit fabrication and, more particularly, to semiconductor devices with strained structures. Background technique [0002] As semiconductor devices such as metal-oxide-semiconductor field-effect transistors (MOSFETs) are scaled through various technology nodes, high-k gate dielectric and metal Reduced size improves device performance. In addition, carrier mobility can be enhanced using a strained structure in which the source and drain (S / D) of MOSFETs using selectively grown silicon germanium (SiGe) are recessed into the cavity. [0003] However, there are challenges in applying these components and processes in complementary metal-oxide-semiconductor (CMOS) fabrication. These problems are exacerbated when the gate length and spacing between devices is reduced. For example, increasing carrier mobility in semiconductor devices is difficult to achieve because strained materials cannot transfer a given amount of ...
Claims
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IPC IPC(8): H01L21/336H01L21/8238
CPCH01L21/823418H01L21/823425H01L21/823481H01L21/823807H01L21/823814H01L21/823878H01L29/66545H01L29/7845H01L21/823412H01L21/30604H01L29/045H01L29/0653H01L29/0847H01L29/66636H01L29/7848H01L21/02532H01L21/0262H01L21/02661H01L21/30608H01L21/3065H01L21/3083H01L29/7846
Inventor 李彦儒游明华李资良李启弘蔡邦彦舒丽丽林逸宏郑有宏
Owner TAIWAN SEMICON MFG CO LTD