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A light-emitting diode epitaxial wafer and its preparation method

A technology of light-emitting diodes and epitaxial wafers, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problems of low luminous efficiency of light-emitting diodes, and achieve the effects of improving internal quantum efficiency, suppressing electron overflow, and improving luminous efficiency.

Active Publication Date: 2016-06-01
HC SEMITEK ZHEJIANG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In order to solve the problem of low luminous efficiency of semiconductor light-emitting diodes, an embodiment of the present invention provides a light-emitting diode epitaxial wafer and a preparation method thereof

Method used

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  • A light-emitting diode epitaxial wafer and its preparation method
  • A light-emitting diode epitaxial wafer and its preparation method

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Embodiment 1

[0028] An embodiment of the present invention provides a light-emitting diode epitaxial wafer. In this embodiment, among the multiple quantum barrier layers of the multi-quantum well layer, the n-type doped In x Al y Ga 1-x-y The quantum barrier layer of the N layer 601 is p-type doped, while the other quantum barrier layers are not doped.

[0029] Specifically, such as figure 1 As shown, the light-emitting diode epitaxial wafer includes: a substrate 101, a low-temperature buffer layer 102 sequentially stacked on the substrate, an undoped GaN layer 103, an n-type doped GaN layer 104, multiple quantum well layers, n-type Doped In x Al y Ga 1-x-y An N layer and a p-type layer, the multi-quantum well layer includes quantum barrier layers and quantum well layers grown alternately with the quantum barrier layers, where 0≤x≤1, 0≤y≤1. In the aforementioned multiple quantum well layer, the closest to the n-type doped In x Al y Ga 1-x-y The quantum barrier layer of the N layer...

Embodiment 2

[0053] An embodiment of the present invention provides a light-emitting diode epitaxial wafer. Compared with Embodiment 1 of the present invention, the difference lies in that all quantum barrier layers in Embodiment 2 of the present invention are p-type doped. Specifically, such as figure 2 As shown, the light-emitting diode epitaxial wafer includes, from bottom to top: substrate 101, low-temperature buffer layer (buffer layer) 102, undoped GaN layer (u-GaN) 103, n-type doped GaN layer 104, multi-quantum Well layer, n-Al 0.08 Ga 0.92 N layer 601 , Mg-doped p-type GaN layer 107 and p-type GaN contact layer 108 .

[0054] It should be noted that, in the second embodiment, all quantum barrier layers are p-type doped, and in other embodiments, some quantum barrier layers may be p-type doped, and some quantum barrier layers are not adulterated.

[0055] The preparation method of the above light-emitting diode epitaxial wafer is as follows: first grow a low-temperature buffer ...

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Abstract

The invention discloses a light emitting diode epitaxial wafer and a preparation method of the light emitting diode epitaxial wafer and belongs to the field of semiconductor light emitting diodes. The light emitting diode epitaxial wafer comprises a substrate, a buffer layer, an undoped GaN layer, a n-type doped GaN layer, a multi-quantum well layer and a p-type layer, the buffer layer, the undoped GaN layer, the n-type doped GaN layer, the multi-quantum well layer and the p-type layer are stacked on the substrate in sequence, in the multi-quantum well layer, at least one of the quantum barrier layers is the p-type doped quantum barrier layer, and at least one of the 1-25 quantum barrier layers close to the n-type doped InxAlyGa1-x-yN layer is the p-type doped quantum barrier layer. According to the preparation method of the light emitting diode epitaxial wafer, the method comprises the low temperature buffer layer, the undoped GaN layer, the n-type doped GaN layer, the multi-quantum well layer, the n-type doped InxAlyGa1-x-yN layer and the p-type layer, and the low temperature buffer layer, the undoped GaN layer, the n-type doped GaN layer, the multi-quantum well layer, the n-type doped InxAlyGa1-x-yN layer and the p-type layer grow on the substrate in sequence, wherein 0<=x<=1, 0<=y<=1. The light emitting diode epitaxial wafer effectively improves luminous efficiency of a light emitting diode.

Description

technical field [0001] The invention relates to the field of semiconductor light-emitting diodes, in particular to a light-emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] Semiconductor light-emitting diodes (Light-Emitting Diodes, LED) have attracted widespread attention due to their advantages of energy saving, environmental protection, high reliability, and long service life. . [0003] The chip of the semiconductor light-emitting diode includes a chip substrate for epitaxy, an epitaxial semiconductor material and a transparent metal electrode, and the chip substrate for epitaxy and the epitaxial semiconductor material constitute the epitaxial wafer of the light-emitting diode. The existing epitaxial wafers are usually composed of substrate, buffer layer, N-type layer, multiple quantum wells and P-type layer from bottom to top. [0004] In the process of realizing the present invention, the inventor finds that there are at l...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/32H01L33/00
Inventor 童吉楚魏世祯陈柏松胡加辉谢文明
Owner HC SEMITEK ZHEJIANG CO LTD