Method of reducing surface roughness of InP-base InGaAs heteroblastic material
A technology with gradual changes in surface roughness and composition, applied in sustainable manufacturing/processing, electrical components, climate sustainability, etc., to achieve the effects of avoiding negative effects, low cost, and simple process
Active Publication Date: 2013-04-24
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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A common method to reduce the surface roughness of metamorphic materials is to lower the growth temperature of the material, but lowering the growth temperature will introduce more background impurities when growing the material, which can easily form point defects
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Embodiment 1
[0021] A method for reducing In on InP substrates 0.8 Ga 0.2 The method of surface roughness of As variation detector material:
[0022] (1) For the epitaxy of In on the InP substrate 0.8 Ga 0.2 As anomaly detector material, it is necessary to grow an anomaly buffer layer on an InP substrate first;
[0023] (2) Using conventional molecular beam epitaxy to grow highly doped n-type In on semi-insulating InP substrates x Ga 1-x As composition graded buffer layer, where x varies continuously from 0.53 to 0.8 which is lattice-matched with InP, and the electron concentration is 2 × 10 18 cm -3 , the epitaxial layer can simultaneously serve as the lower contact layer;
[0024] (3) in x Ga 1-x A GaAs reverse mismatched ultra-thin epitaxial layer with a thickness of 1nm is grown on the As composition graded buffer layer to reduce the surface roughness of the material;
[0025] (4) Regrowth In 0.8 Ga 0.2 As variant detector structure, including 2 μm thick electron concentrat...
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Abstract
The invention relates to a method of reducing surface roughness of InP-base InGaAs heteroblastic material. According to the method, reduction of the surface roughness of the heteroblastic material is achieved by adding a layer of reversed mismatch ultrathin epitaxial layer on an InP-base regular InGaAs semiconductor heteroblastic buffer layer in an epitaxial mode, wherein thickness of the reversed mismatch ultrathin epitaxial layer is smaller than critical thickness of a reversed mismatch ultrathin epitaxial layer on the heteroblastic buffer layer and is 0.5-5 nm in general. According to the method of reducing the surface roughness of the InP-base InGaAs heteroblastic material, material does not need to be grown at an over-low growing temperature, introduction of unnecessary background impurities is avoided, the technology is simple, cost is low, and application prospect is good.
Description
technical field [0001] The invention belongs to the field of semiconductor material preparation, in particular to a method for reducing the surface roughness of semiconductor metamorphic materials. Background technique [0002] With the development of semiconductor energy band engineering and the advancement of material epitaxy technology, more and more attention has been paid to heteroepitaxy materials with a lattice mismatch with the substrate. When the epitaxial thickness exceeds a certain thickness, the lattice constant of the lattice-mismatched epitaxial layer will spontaneously recover to its intrinsic lattice constant, and the epitaxial material whose lattice constant returns to the intrinsic lattice constant is called an anomalous material. This process can be called the lattice relaxation of the material. During the relaxation process, defects and dislocations will be generated in the material, which will reduce the quality of the material. To grow heterogeneous ma...
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IPC IPC(8): H01L31/18
CPCY02P70/521Y02P70/50
Inventor 顾溢张永刚
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI