Application of chemical mechanical polishing slurry
A chemical mechanical and polishing slurry technology, which is applied in the application field of chemical mechanical polishing slurry, can solve the problems of insufficient polishing selectivity, partial or overall corrosion, and insufficient rapid removal of copper, etc., to achieve the reduction of sticky dirt and other residues, and reduce pollution The effect of preventing local and general corrosion
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[0021] Examples 1~6
[0022] Table 1
[0023]
[0024] Remarks: HEDP: hydroxy ethylidene diphosphonic acid, ATMP: amino trimethylene phosphonic acid, HPAA: 2-hydroxy phosphono acetic acid; PAN: ammonium polyacrylate, PAA: polyacrylic acid, PAE: polyacrylic acid-polyacrylate copolymer; The rest of the chemical mechanical polishing slurry is water.
[0025] Put the materials in the following order: grinding particles, half the amount of deionized water, organic phosphonic acid, H 2 O 2 , Polyacrylic acid and / or its copolymers are sequentially added to the reactor and stirred uniformly, and the rest of the deionized water is added, and finally the pH regulator (20% KOH or dilute HNO 3 , Choose according to the needs of pH value) Adjust to the required pH value and continue to stir to a uniform fluid, and stand still for 10 minutes to obtain a chemical mechanical polishing slurry.
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