Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Application of chemical mechanical polishing slurry

A chemical mechanical and polishing slurry technology, which is applied in the application field of chemical mechanical polishing slurry, can solve the problems of insufficient polishing selectivity, partial or overall corrosion, and insufficient rapid removal of copper, etc., to achieve the reduction of sticky dirt and other residues, and reduce pollution The effect of preventing local and general corrosion

Inactive Publication Date: 2013-05-01
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
View PDF6 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are defects, scratches, stains and / or other residues on the surface of the substrate after the above-mentioned polishing slurry for copper is used, or the rapid removal of copper is not enough, that is, the polishing selectivity is not enough, or there are defects in the polishing process. problems such as local or general corrosion

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Application of chemical mechanical polishing slurry
  • Application of chemical mechanical polishing slurry
  • Application of chemical mechanical polishing slurry

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～6

[0022] Table 1

[0023]

[0024] Remarks: HEDP: hydroxyethylidene diphosphonic acid, ATMP: aminotrimethylene phosphonic acid, HPAA: 2-hydroxyphosphonoacetic acid; PAN: polyammonium acrylate, PAA: polyacrylic acid, PAE: polyacrylic acid-polyacrylate copolymer; The remainder of the above chemical mechanical polishing slurry is water.

[0025] Put the materials in the following order: abrasive particles, half the amount of deionized water, organic phosphonic acid, H 2 o 2 , polyacrylic acid and / or its copolymers are sequentially added to the reactor and stirred evenly, the remaining deionized water is added, and finally the pH regulator (20% KOH or dilute HNO 3 , select according to the needs of the pH value) adjust to the required pH value and continue to stir until a uniform fluid, and stand still for 10 minutes to obtain a chemical mechanical polishing slurry.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Roughnessaaaaaaaaaa
Login to View More

Abstract

The invention discloses an application of a chemical mechanical polishing slurry in copper polishing. The chemical mechanical polishing slurry comprises grinding particles, an organic phosphonic acid, polyacrylic acid and / or its copolymer, an oxidant and a carrier. The chemical mechanical polishing slurry has the advantages of prevention of the partial and whole corrosion of a metal material, reduction of the pollutants on the surface of a liner, reduction of the content of the grinding particles, improvement of the copper removal rate and reduction of the tantalum removal rate, so the polishing selectivity of different substrates can be obtained.

Description

technical field [0001] The invention relates to the application of a chemical mechanical polishing slurry, in particular to a copper chemical mechanical polishing slurry. Background technique [0002] With the development of microelectronics technology, the integration of very large scale integrated circuit chips has reached billions of components, and the feature size has entered the nanometer level, which requires hundreds of processes in the microelectronics process, especially multi-layer wiring, Substrates and media must undergo chemical mechanical planarization. VLSI wiring is being transformed from traditional Al to Cu. Compared with Al, Cu wiring has the advantages of low resistivity, high electromigration resistance, and short RC delay time, which can reduce the number of layers by half, reduce the cost by 30%, and shorten the processing time by 40%. The advantages of Cu wiring have attracted worldwide attention. [0003] However, there is currently no official t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23F3/06
Inventor 荆建芬张建蔡鑫元姚颖
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com