Chemical Mechanical Polishing Slurry Composition for Polishing Phase-Change Memory Device and Method for Polishing Phase-Change Memory Device Using the Same

Abstract

A slurry composition for chemical mechanical polishing (CMP) of a phase-change memory device is provided. The slurry composition comprises deionized water and iron or an iron compound. The slurry composition can achieve high polishing rate on a phase-change memory device and improved polishing selectivity between a phase-change memory material and a polish stop layer (e.g., a silicon oxide film), can minimize the occurrence of processing imperfections (e.g., dishing and erosion), and can lower the etch rate on a phase-change memory material to provide a high-quality polished surface. Further provided is a method for polishing a phase-change memory device using the slurry composition.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This non-provisional application claims priority under 35 USC Section 119 from Korean Patent Application No. 10-2007-0065877, filed on Jun. 29, 2007, the entire disclosure of which is hereby incorporated by reference.FIELD OF THE INVENTION[0002]The present invention relates to a slurry composition for polishing a phase-change memory device used in a semiconductor manufacturing process. More specifically, the present invention relates to a slurry composition for chemical mechanical polishing (CMP) of a metal alloy or a chalcogenide included in a phase-change memory device, and a method for polishing a phase-change memory device using the slurry composition.BACKGROUND OF THE INVENTION[0003]Demand for semiconductor memories has increased with expanding global markets for electronic devices, such as digital cameras, camcorders, MP3 players, digital multimedia broadcasting (DMB) receivers, navigation systems and mobile phones. In addition, ther...

AI Technical Summary

Benefits of technology

[0011]The present invention provides a slurry composition for chemical mechanical polishing (CMP) of a phase-change memory device that can polish a phase-change memory device at a high rate, can achieve high polishing selectivity between a phase-change memory material and a polish stop layer (e.g., a silicon oxide film), and can minimize the occurrence of processing imperfections (e.g., dishing and erosion) to provide a high-quality polished surface; and a method for polishing a phase-change memory device using the CMP slurry composition.

[0012]The present invention further provides a slurry composition for chemical mechanical polishing of a phase-change memory device that can cause substantially no change in the composition or phase of a phase-change material before and after polishing, can minimize the occurrence of surface imperfections (e.g., scratches, defects, corrosion and polishing residues) to provide a clean polished surface, and includes no abrasive particles to prevent the surface of a wafer from being contaminated by abrasive particles; and a method for polishing a phase-change memory device using the CMP slurry composition.

Problems solved by technology

Therefore, the conventional metal materials cannot be used for PRAM devices and cause a significant difference in layer characteristics.