Chemical Mechanical Polishing Slurry Composition for Polishing Phase-Change Memory Device and Method for Polishing Phase-Change Memory Device Using the Same

Inactive Publication Date: 2009-01-01
CHEIL IND INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0011]The present invention provides a slurry composition for chemical mechanical polishing (CMP) of a phase-change memory device that can polish a phase-change memory device at a high rate, can achieve high polishing selectivity between a phase-change memory material and

Problems solved by technology

Therefore, the conventional metal materials cannot be used for PRAM

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Example

Examples 1-2 and Comparative Examples 1-4

[0040]Slurries having the compositions indicated in Table 1 are prepared using deionized water containing no abrasive particles. The kind and content of oxidizing agents used are varied in the slurry compositions. Nitric acid is used to adjust the final pH of all slurry compositions to 3.5.

TABLE 1Kind ofContent ofExample No.oxidizing agentoxidizing agent (%)pHExample 1Propylenediamine0.23.5tetraacetic acid-FeExample 2FeCl30.23.5Comparative Example 1—03.5Comparative Example 2H2O20.53.5Comparative Example 3H2O21.03.5Comparative Example 4Ammonium1.03.5persulfate

[0041]After each of the slurry compositions is used to polish a blanket wafer deposited with a phase-change material under the following polishing conditions, the polishing performance of the slurry composition on the phase-change material is evaluated. The results are shown in Table 2.

[0042]As the phase-change material, Ge2Sb2Te5 (GST), whose composition is germanium (Ge): antimony (Sb):...

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Abstract

A slurry composition for chemical mechanical polishing (CMP) of a phase-change memory device is provided. The slurry composition comprises deionized water and iron or an iron compound. The slurry composition can achieve high polishing rate on a phase-change memory device and improved polishing selectivity between a phase-change memory material and a polish stop layer (e.g., a silicon oxide film), can minimize the occurrence of processing imperfections (e.g., dishing and erosion), and can lower the etch rate on a phase-change memory material to provide a high-quality polished surface. Further provided is a method for polishing a phase-change memory device using the slurry composition.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This non-provisional application claims priority under 35 USC Section 119 from Korean Patent Application No. 10-2007-0065877, filed on Jun. 29, 2007, the entire disclosure of which is hereby incorporated by reference.FIELD OF THE INVENTION[0002]The present invention relates to a slurry composition for polishing a phase-change memory device used in a semiconductor manufacturing process. More specifically, the present invention relates to a slurry composition for chemical mechanical polishing (CMP) of a metal alloy or a chalcogenide included in a phase-change memory device, and a method for polishing a phase-change memory device using the slurry composition.BACKGROUND OF THE INVENTION[0003]Demand for semiconductor memories has increased with expanding global markets for electronic devices, such as digital cameras, camcorders, MP3 players, digital multimedia broadcasting (DMB) receivers, navigation systems and mobile phones. In addition, ther...

Claims

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Application Information

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IPC IPC(8): H01L45/00C09K13/00C09K13/04H01L21/302B24B37/00H01L21/304
CPCC09G1/04H01L45/06H01L45/1683H01L45/144H01L45/148H01L45/143H10N70/231H10N70/8825H10N70/884H10N70/8828H10N70/066C09K3/14H01L21/304
Inventor LEE, TAE YOUNGLEE, IN KYUNGCHOI, BYOUNG HOPARK, YONG SOON
Owner CHEIL IND INC
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