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Zno-based glass frit composition and aluminum paste composition for back contacts of solar cell using the same

A solar cell and backside contact technology, applied to conductive materials dispersed in non-conductive inorganic materials, circuits, photovoltaic power generation, etc., can solve problems such as increased chip breakage rate, low moisture stability, and low battery efficiency

Inactive Publication Date: 2013-05-08
DONGJIN SEMICHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] However, the aforementioned bismuth-based glass compositions use expensive Bi 2 o 3 , and due to its high thermal expansion coefficient can cause substrate bending to increase the fracture rate of the wafer, and has low moisture stability or shows relatively low cell efficiency

Method used

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  • Zno-based glass frit composition and aluminum paste composition for back contacts of solar cell using the same
  • Zno-based glass frit composition and aluminum paste composition for back contacts of solar cell using the same
  • Zno-based glass frit composition and aluminum paste composition for back contacts of solar cell using the same

Examples

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Effect test

Embodiment 17-22

[0093] In order to further evaluate the optimal glass composition of the wafer, the glass frit of Example 3 was used to prepare an aluminum paste composition according to the composition and composition ratio shown in Table 6 below (the unit in Table 6 is wt%). In addition, the same aluminum powder, organic binder, organic solvent, and additives as in Examples 9-16 were used.

[0094] Table 6

[0095]

[0096] As shown in Table 6, although the electrical characteristics of Examples 17-22 using the glass frit of Example 3 of the present invention slightly decreased with the increase of the glass medium content, compared with the comparative examples, the aforementioned examples still had relatively Excellent performance.

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Abstract

PURPOSE: A ZnO based glass frit composition and an aluminum paste composition for rear electrode of solar cell using thereof are provided to minimize bending of substrate after plasticizing the substrate and increase open circuit voltage and phosphor conversion efficiency during manufacturing of the rear electrode of solar cell. CONSTITUTION: A ZnO based glass frit composition comprises 45-60 weight% of ZnO, more than one type of metal oxides which are selected from 0.1-45 weight% of SiO2, 0.1-40 weight% of B2O3, and 1-10 weight% of Al2O3, 0.1-20 weight% of transition metal oxides, lanthanoids oxides, or a mixture thereof, 3-5 weight% of P2O5 and 3-5 weight% of BaO. The glass frit composition has less than 5% of moisture content and average particle size of 0.5-20micro meters. The coefficient of thermal expansion for the glass frit composition is 50×10^-7 / deg.C-150×10^-7 / deg.C. The aluminum paste composition for rear electrode of solar cell comprises 40-90 weight% of aluminium powder, 0.1-10 weight% of inorganic binder, and 1-50 weight% of organic vehicle. The aluminum paste composition includes ZnO based glass frit composition as an inorganic binder.

Description

Background of the invention [0001] (a) Technical field [0002] The present disclosure relates to a zinc oxide-based glass frit composition and an aluminum paste composition using the composition and used for solar cell back contacts, the glass frit composition can be used in the manufacturing process of solar cell back contacts The substrate warpage is minimized and moisture stability is exhibited after firing, and the open circuit voltage and light conversion efficiency of the cell can be improved. [0003] (b) Description of related technology [0004] In recent years, solar cells have attracted attention because they are rich in energy resources and do not cause environmental pollution problems. A solar cell has a semiconductor junction structure of a P-type semiconductor and an N-type semiconductor. If light enters a solar cell, negatively charged electrons are dislodged and positively charged electron holes are created by the light's interaction with the semiconductor...

Claims

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Application Information

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IPC IPC(8): C03C8/04H01L31/042H01B1/22
CPCY02E10/50C03C3/064C03C3/066C03C3/078C03C3/083C03C3/093C03C8/04C03C8/08C03C8/16C03C8/18H01B1/14H01L31/022425
Inventor 黄建镐李英焕卢和泳
Owner DONGJIN SEMICHEM CO LTD
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