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Methods for controlling plasma constituent flux and deposition during semiconductor fabrication and apparatus for implementing the same

A plasma and temperature control technology, applied in semiconductor/solid-state device manufacturing, program control, electrical program control, etc.

Active Publication Date: 2013-05-08
LAM RES CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Moreover, the issues noted above are even more problematic in the manufacture of advanced devices with high aspect ratio features and extremely small dimensions

Method used

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  • Methods for controlling plasma constituent flux and deposition during semiconductor fabrication and apparatus for implementing the same
  • Methods for controlling plasma constituent flux and deposition during semiconductor fabrication and apparatus for implementing the same
  • Methods for controlling plasma constituent flux and deposition during semiconductor fabrication and apparatus for implementing the same

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Embodiment Construction

[0022] In the ensuing description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the present invention may be practiced without some or all of these specific details. In other instances, well known process operations have not been described in detail in order not to unnecessarily obscure the present invention.

[0023] In the manufacture of semiconductors, plasma etch processes typically use patterned masking materials to protect portions of the substrate that are not to be etched. One goal of plasma etching is to tailor the plasma so as to optimize the etch selectivity of the exposed material on the substrate rather than the mask material. In general, however, it is unavoidable that the plasma will etch the mask material to some extent. Furthermore, it often happens that the material to be etched on the substrate will require the plasma formulation t...

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Abstract

A time-dependent substrate temperature to be applied during a plasma process is determined. The time-dependent substrate temperature at any given time is determined based on control of a sticking coefficient of a plasma constituent at the given time. A time-dependent temperature differential between an upper plasma boundary and a substrate to be applied during the plasma process is also determined. The time-dependent temperature differential at any given time is determined based on control of a flux of the plasma constituent directed toward the substrate at the given time. The time-dependent substrate temperature and time-dependent temperature differential are stored in a digital format suitable for use by a temperature control device defined and connected to direct temperature control of the upper plasma boundary and the substrate. A system is also provided for implementing upper plasma boundary and substrate temperature control during the plasma process.

Description

Background technique [0001] During semiconductor manufacturing, a plasma etch process may be used to transfer a photoresist mask pattern of a portion of an electrical circuit onto one or more materials (conductors or insulators) on a semiconductor wafer. In the plasma etch process, the plasma acts to etch away material exposed in the opening areas of the photoresist mask pattern (ie, in the areas not protected by the photoresist mask). The etching reaction is accomplished by chemically active and charged species (ions) present in the plasma. A plasma is generated from the reactant mixture within the plasma chamber. In some applications, an electric field can be used to accelerate ions present in the plasma toward the wafer, thereby providing directionality to the etching of the material of the wafer. When the etching process is complete, the photoresist mask material is removed from the wafer. [0002] During the plasma etch process, photoresist materials may be attacked or...

Claims

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Application Information

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IPC IPC(8): H01L21/3065
CPCH01L21/67248H01L21/31144C23F1/08H01J37/32935H01L21/31116H01L21/3065G05B19/418G05B2219/45031G05B2219/45212H01L21/67069
Inventor 拉金德尔·德辛德萨
Owner LAM RES CORP
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