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Laser annealing method for semiconductor device of complicated structure

A technology of laser annealing and complex structure, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., and can solve the problem that the area is a shadow area

Inactive Publication Date: 2013-05-22
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Due to the light projection of the obliquely incident laser beam, some areas may appear as shadow areas during the scanning annealing process

Method used

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  • Laser annealing method for semiconductor device of complicated structure
  • Laser annealing method for semiconductor device of complicated structure

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] The laser annealing method for semiconductor devices with complex structures can make the devices using the inclined ion implantation process receive special laser annealing treatment, and the processing steps are as follows:

[0026] 1. Adjust the laser beam to the same angle as the tilt angle of ion implantation;

[0027] 2. Adjust the length direction of the ion implantation window to be perpendicular to the projection of the laser beam on the wafer plane;

[0028] 3. The stage carrying the wafer moves in a straight line at a constant speed along the x direction at the initial position, and the x direction is the movement direction of the wafer. As a result, the relative movement of the laser beam spot on the device structure to be processed is formed, and the laser scanning annealing is implemented;

[0029] 4. After scanning in the x direction, the film stage moves step by step in the y direction. The moving distance is one step, and one step is equal to the size ...

Embodiment 2

[0033] The laser annealing method for semiconductor devices with complex structures can make the device receive selective surface laser annealing treatment, and the processing steps are as follows:

[0034] 1. Adjust the laser beam to the same angle as the tilt angle of ion implantation;

[0035] 2. Adjust the sidewall surface of the device structure to be perpendicular to the projection of the laser beam on the wafer plane;

[0036] 3. The stage carrying the wafer moves in a straight line at a constant speed along the x direction at the initial position, and the x direction is the movement direction of the wafer. As a result, the relative movement of the laser beam spot on the device structure to be processed is formed, and the laser scanning annealing is implemented;

[0037] 4. After scanning in the x direction, the film stage moves step by step in the y direction. The moving distance is one step, and one step is equal to the size of the effective laser beam spot in this d...

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Abstract

The invention discloses a laser annealing method for a semiconductor device of a complicated structure and belongs to a semiconductor manufacturing process range. The laser annealing method is characterized in that an oblique incidence mode is adopted, during laser annealing, an included angle is formed between a laser beam and a normal direction of a wafer, beam spots of the laser beam are acted on a three-dimensional device structure on the wafer, and a movement direction of the wafer is parallel to a line segment formed by projection of the laser beam on the wafer. Annealing is performed by aiming at the three-dimensional device structure and a device prepared by an angled ion implantation process. By oblique laser irradiation, shallow surface layers of the front and side faces of the semiconductor device of the complicated structure can obtain identical laser surface annealing treatment, and impurities can be activated through an ion implantation window along an angled ion implantation direction to obtain a device structure with special impurity distribution. By the aid of projection effect of oblique laser incidence, selective annealing is performed, namely irradiated areas are annealed, and unirradiated blind areas are not annealed.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing technology, and in particular relates to a laser annealing method for complex structure semiconductor devices. Background technique [0002] The rapid development of the semiconductor industry promotes the continuous advancement of technology, and the cycle of various new technologies from research and development to implementation is getting shorter and shorter. Behind this is the desire to take the lead in occupying the potential market and strong financial support. The process nodes of semiconductor devices represented by integrated circuits and large-capacity memories are constantly shrinking, and the emergence of more three-dimensional structure devices makes the new process technology different from the original planar process in some key points, such as multiple The copper interconnection process with more than ten layers is completely different from the five-six-layer tungsten pl...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/268
CPCH01L21/26586H01L21/268
Inventor 周卫严利人刘朋窦维治
Owner TSINGHUA UNIV