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Coating method in physical etching technology

A physical etching and process technology, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as vitrification, carbonization, and poor thermal conductivity, and achieve various specifications

Inactive Publication Date: 2013-05-22
SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] ① Too little coating will make the heat conduction effect worse, resulting in a series of problems such as vitrification and carbonization, such as figure 2 shown;
[0005] ② Too much coating will cause the glue to overflow on the edge of the substrate, and the etching particles cannot bombard the edge pattern covered by the glue, which will cause the wrong connection of the etched pattern, such as image 3 (a) and (b);
[0006] ③Silicone grease, silver-impregnated rubber and paraffin and other oils and fats all have different degrees of outgassing, so if used in a high-vacuum etching system, it will affect the vacuum of the system to a certain extent;

Method used

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  • Coating method in physical etching technology
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  • Coating method in physical etching technology

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Embodiment Construction

[0035] The specific implementation of using polyimide double-sided tape as the patch medium in the physical etching process is as follows:

[0036] (1) Tape selection: polyimide (polyimide) high-temperature-resistant double-sided tape has a wide variety and various forms. In the physical etching process, it is necessary to use high-temperature-resistant, low-outgassing polyimide (polyimide) double-sided tape. Polyimide (polyimide) high temperature resistant double-sided tape has many sizes and specifications, generally 10mm, 12mm, 15mm and 20mm wide, etc., and can also customize the width specification from the manufacturer according to actual needs, which is very flexible and convenient. The polyimide film in polyimide high temperature resistant double-sided tape is generally amber in color, and there are protective films on the top and bottom, such as Figure 5 shown;

[0037] (2) Cutting the double-sided tape: Cut the polyimide double-sided tape to a size slightly larger t...

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Abstract

The invention discloses a coating method in a physical etching technology. The coating method includes: (1) selecting an adhesive tape: adopting a high temperature resisting polyimide double sided tape; (2) cutting the double sided tape: cutting the polyimide double sided tape into a shape which is little larger than a need-to-be-etched sample; (3) fixing the adhesive tape: peeling a protecting film on the lower surface of the polyimide double sided tape, fixedly adhering the adhesive tape on a sample table of an etching machine, and removing a protecting film on the upper surface of the adhesive tape; (4) adhering the sample: placing the need-to-be-etched sample on the polyimide double sided tape, and fixedly adhering the sample to the polyimide double sided tape via a certain of positive pressure; and (5) peeling off the tape: after the physical etching technology is finished, directly taking down a normal etched hard sample from the polyimide double sided tape, and peeling the adhesive tape off the sample table. The coating method in the physical etching technology is convenient to operate, good in heat conduction, good in etched graphs, low in cost and the like.

Description

technical field [0001] This patent relates to a patch method in the physical etching process, specifically to a polyimide (polyimide) high temperature resistant double-sided tape as an intermediate (adhesive) between the etching cooling table and the substrate patch method. Background technique [0002] The physical etching process is also called ion beam etching, ion milling, etc. The basic principle of physical etching is that the ion beam emitted by the ion source bombards the surface of the substrate, and the atoms of the substrate material are knocked out of the substrate surface. figure 1 Is the schematic diagram of ion beam etching. Since ion beam etching is the direct bombardment of the surface of the substrate by ions emitted by the ion source, a large part of the energy of the ion bombardment will be converted into heat, which will heat up the surface of the sample, resulting in changes in the etched surface state, that is, the temperature effect of etching. . E...

Claims

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Application Information

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IPC IPC(8): H01L21/683
Inventor 贾嘉刘向阳乔辉李向阳
Owner SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI