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High-light AlGaInP light emitting diode (LED) and manufacturing method thereof

A light-emitting diode, high-brightness technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of unfavorable packaging and subsequent applications of N-type electrodes, small reflection angle, high cost, reduce the chance of conversion into heat, reduce Chip temperature, low cost effect

Inactive Publication Date: 2013-05-22
DALIAN MEIMING EPITAXIAL WAFER TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Although flip-chip AlGaInP light-emitting diodes made by substrate transfer technology can solve the problem of small reflection angle of traditional DBR by using omni-directional metal reflector technology (ODR), they are faced with high cost, low yield and unfavorable packaging for N-type electrodes upward. and follow-up applications

Method used

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  • High-light AlGaInP light emitting diode (LED) and manufacturing method thereof
  • High-light AlGaInP light emitting diode (LED) and manufacturing method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0046] Such as figure 1 and figure 2 As shown, a high-brightness AlGaInP light-emitting diode, its structure from bottom to top is: N-type contact electrode, GaAs substrate, composite DBR structure, N-type confinement layer, active layer, P-type confinement layer, GaP window layer, P-type contact electrode, wire electrode, ITO layer.

[0047] The material of the upper DBR layer of the composite DBR structure is Al 0.4 Ga 0.3 In 0.3 P / Al 0.4 In 0.6 P, the material of the lower DBR layer is Al 0.7 Ga 0.3 As / AlAs, in which the lower DBR layer is oxidized along the outside of the chip and accounts for 30% of the chip area; the surface of the GaP window layer is periodically textured and surface roughened. The diameter of the periodic texture pattern is 1 micron and the depth is 1.5 microns.

[0048]

[0049] The manufacturing method of the above-mentioned high-brightness AlGaInP light-emitting diode comprises the following steps:

[0050] a) providing a GaAs substrate;...

Embodiment 2

[0063] Such as figure 1 and figure 2 As shown, a high-brightness AlGaInP light-emitting diode, its structure from bottom to top is: N-type contact electrode, GaAs substrate, composite DBR structure, N-type confinement layer, active layer, P-type confinement layer, GaP window layer, P-type contact electrode, wire electrode, ITO layer.

[0064] The material of the upper DBR layer of the composite DBR structure is Al 0.3 Ga 0.7 As / Al 0.3 In 0.7 P, the material of the lower DBR layer is Al 0.6 Ga 0.4 As / Al 0.6 In 0.4 P , where the lower DBR layer is oxidized along the outside of the chip and accounts for 70% of the chip area; the surface of the GaP window layer is periodically textured and surface roughened, and the diameter of the periodic texture pattern is 5 microns and the depth is 2 microns.

[0065]

[0066] The manufacturing method of the above-mentioned high-brightness AlGaInP light-emitting diode comprises the following steps:

[0067] a) providing a GaAs sub...

Embodiment 3

[0080] Such as figure 1 and figure 2 As shown, a high-brightness AlGaInP light-emitting diode, its structure from bottom to top is: N-type contact electrode, GaAs substrate, composite DBR structure, N-type confinement layer, active layer, P-type confinement layer, GaP window layer, P-type contact electrode, wire electrode, ITO layer.

[0081] The material of the upper DBR layer of the composite DBR structure is In 0.5 Ga 0.5 P / Al 0.1 Ga 0.4 In 0.5 P , the material of the lower DBR layer is Al 0.8 Ga 0.2 As / Al 0.8 In 0.2 P, in which the lower DBR layer is oxidized along the outside of the chip and accounts for 50% of the chip area; the surface of the GaP window layer is periodically textured and surface roughened, and the diameter of the periodic texture pattern is 3 microns and the depth is 1.7 microns.

[0082]

[0083] The manufacturing method of the above-mentioned high-brightness AlGaInP light-emitting diode comprises the following steps:

[0084] a) providin...

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Abstract

The invention provides a high-light AlGaInP light emitting diode (LED) and manufacturing method of the LED. According to the high-light AlGaInP LED, a combined type distributed bragg reflector (DBR) structure is adopted and the problem that a traditional DBR is small in reflection angle is solved. The combined type DBR structure is composed of an upper DBR layer and a lower DBR layer, wherein the lower DBR layer is partially oxidized, difference between refractive indexes of the lower DBR layer and the upper DBR layer is increased, and reflection efficiency of light is improved. Meanwhile, cycle grain and surface roughening are simultaneously adopted and total reflection of the surface is further destroyed. The high-light AlGaInP LED improves luminous efficiency and a luminous angle of a chip and achieves improvement of luminance of the chip. Meanwhile, due to the fact that the total reflection of the surface of the chip is destroyed, the high-light AlGaInP LED reduces chances through which the light is turned into heat on the interior of the chip, lowers temperature of the chip, improves properties and reliability of devices, and is simple in craft and low in cost.

Description

technical field [0001] The invention relates to the technical field of semiconductor lighting, in particular to an AlGaInP light-emitting diode and a manufacturing method thereof. Background technique [0002] Due to the advantages of small size, long life, and low driving voltage, light-emitting diodes have long become indispensable optoelectronic components in daily life. Light-emitting diodes are widely used and can be roughly divided into visible light and invisible light bands. At present, visible light bands are widely used in many products in life, such as mobile phones, PDA product backlights, traffic lights, etc. The invisible light band is used in wireless communications, such as remote controls, sensors, and light sources for communications. [0003] The unique material properties of AlGaInP are very suitable for the development of high-brightness light-emitting diodes. Regarding the improvement of luminous efficiency, there are many ways to improve it. For exa...

Claims

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Application Information

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IPC IPC(8): H01L33/30H01L33/10H01L33/00
Inventor 肖志国高本良武胜利
Owner DALIAN MEIMING EPITAXIAL WAFER TECH
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