Method recovering ammonia gas in exhaust gas containing organic metal or dust

Abstract

The invention discloses a method recovering ammonia gas in exhaust gas containing organic metal or dust, and mainly aims to solve the problem that an existing method processing the exhaust gas containing the ammonia gas in the prior art cannot solve the problem that waste water contains the organic metal and the dust. The method recovering the ammonia gas in the exhaust gas containing the organic metal or the dust includes the following steps: A, guiding the exhaust gas containing the organic metal or the dust and the ammonia gas to a first space; B, applying a circulation alkali wash procedure with alkali wash solution in the first space; C, enabling the ammonia gas in the exhaust gas to be separated from the organic metal or the dust in the exhaust gas during the circulation alkali wash procedure; and D, collecting the ammonia gas separated during the step C. The method recovering the ammonia gas in the exhaust gas containing the organic metal or the dust can enable the optoelectronic semiconductor industry or the solar energy industry or the like to recovery the exhaust gas generated by carrying out a metal organic chemical vapor deposition (MOCVD) method or a plasma enhanced chemical vapor deposition (PECVD) method or a chemical vapor deposition (DVD) method to achieve recycling application.

Description

technical field [0001] The invention relates to a method for recovering ammonia gas, in particular to a method for recovering ammonia gas in waste gas containing organic metal or dust by using an alkali washing procedure to separate ammonia gas from organic metal or dust. Background technique [0002] In industries such as optoelectronic semiconductors or solar cells, most of the processes for growing semiconductor thin films on substrates use Metal-Organic Chemical Vapor Deposition (MOCVD) or Plasma-Enhanced Chemical Vapor Deposition (Plasma-Enhanced Chemical Vapor Deposition). Deposition, referred to as PECVD) or chemical vapor deposition (Chemical Vapor Deposition, referred to as CVD) in the organic metal chemical vapor deposition method or plasma-assisted chemical vapor deposition method or chemical vapor deposition method will produce ammonia-containing gas containing organic metals or dust At present, these ammonia-containing waste gases containing organic metals and d...

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Problems solved by technology

[0002] In industries such as optoelectronic semiconductors or solar cells, most of the processes for growing semiconductor thin films on substrates use Metal-Organic Chemical Vapor Deposition (MOCVD) or Plasma-Enhanced Chemical Vapor Deposition (Plasma-Enhanced Chemical Vapor Deposition). Deposition, referred to as PECVD) or chemical vapor deposition (Chemical Vapor Deposition, referred to as CVD) in the organic metal chemical vapor deposition method or plasma-assisted chemical vapor deposition method or chemical vapor deposition method will produce ammonia-containing gas containing organic metals or dust At present, these ammonia-containing waste gases containing organic metals and dust can only be treated by pickling or wet scrubbing. The treated wastewater becomes acidic or alkaline ammonia-containing nitrogen containing metal oxides or metal hydroxides. waste water, impact on the environment

[0003] In view of this, the present inventors aimed at the shortcomings and inconveniences caused by the imperfect method of recovering ammonia in the waste gas containing organic metals or dust, and made in-depth ideas, and actively researched and improved the trial production to develop and design this case

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