Plasma processing device

A plasma and processing device technology, applied in the field of plasma-enhanced chemical vapor deposition devices, can solve problems such as uneven film thickness, uneven distribution of reaction gases, and film quality degradation

Active Publication Date: 2013-06-05
理想万里晖真空装备(泰兴)有限公司
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Problems solved by technology

[0007] However, in the prior art, the gas distribution of the reaction gas in the reaction chamber 1 is uneven, the gas flow near the exhaust port 12 is relatively large, and the gas flow away from the exhaust port 12 is small, which will cause Uneven distribution of reactive gas can easily lead to uneven thickness of the formed film, which in turn leads to a decrease in film quality

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Embodiment Construction

[0042] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0043] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways than those described here, so the present invention is not limited by the specific embodiments disclosed below.

[0044]The present invention provides a plasma processing device, including a processing chamber, the processing chamber includes a top wall, a bottom wall opposite to the top wall, and a side wall formed between the top wall and the bottom wall, the processing An air inlet device is provided on the wall of the chamber, an exhaust port is formed on the side wall, a process area is included in the processing chamber, and an exhaust device is...

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Abstract

The invention provides a plasma processing device. The plasma processing device comprises a processing cavity, wherein the processing cavity comprises a top wall, a bottom wall opposite to the top wall, and side walls formed between the top wall and the bottom wall. An air inlet device is arranged on the cavity wall of the processing cavity, air outlets are formed in the side walls, a process area is arranged in the processing cavity, an air outlet device is arranged among the process area and the air outlets, and the air outlet device at least comprises a first air outlet device and a second air outlet device. The first air outlet device is used for limiting plasma in the process area, and the second air outlet device is used for changing air distribution in the process area. The plasma processing device can improve uniformity of the air distribution.

Description

technical field [0001] The invention relates to a plasma processing device, in particular to a plasma enhanced chemical vapor deposition device. Background technique [0002] Thin-film solar cells are solar cells formed by depositing very thin (several micrometers to tens of micrometers) photoelectric materials on substrates such as glass, metal or plastic. Thin-film solar cells can still generate electricity under weak light conditions. The production process consumes less energy and consumes less raw materials, and has the potential to greatly reduce raw material and manufacturing costs. Therefore, the market demand for thin-film solar cells is gradually increasing, and thin-film solar cells Battery manufacturing technology has become a research hotspot in recent years. [0003] Generally speaking, a thin-film solar cell includes in turn: a substrate, a transparent electrode, a p-type doped silicon film, an i layer (non-doped or intrinsic silicon film), an n-type doped si...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/505C23C16/513C23C16/455
Inventor 黄允文陈金元刘传生杨飞云
Owner 理想万里晖真空装备(泰兴)有限公司
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