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Method for forming dielectric anti-reflection coating and photolithography method

An anti-reflection coating and dielectric technology, which is used in the manufacture of circuits, electrical components, semiconductor/solid-state devices, etc., can solve the problems of small modulation range, difficult to control optical performance, and can not meet the needs of the process, and achieve convenient modulation process. Effect

Active Publication Date: 2016-08-03
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology

[0006] Optical properties such as the extinction coefficient (K) and the refractive index (N) of the existing nitrogen-free dielectric antireflective coating (NFDARC) are not easy to control, and the modulation range is too small to meet the requirements of the process

Method used

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  • Method for forming dielectric anti-reflection coating and photolithography method
  • Method for forming dielectric anti-reflection coating and photolithography method
  • Method for forming dielectric anti-reflection coating and photolithography method

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Embodiment Construction

[0043] The existing nitrogen-free dielectric anti-reflective coating (NFDARC) usually adopts plasma enhanced chemical vapor deposition (PECVD), and the gas used is SiH 4 and CO 2 , when forming a nitrogen-free dielectric antireflection coating, by controlling the SiH 4 and CO 2 flow rate to adjust the extinction coefficient (K) and refractive index (N) of the nitrogen-free dielectric anti-reflective coating. In the actual production process, there are differences in the wavelength of the semiconductor substrate, photoresist material, and exposure light source. In order to obtain better photoresist exposure morphology, it is necessary to form a nitrogen-free dielectric anti-reflective coating (NFDARC) with different extinction coefficients (K) and refractive indices (N). The inventors found that the existing method forms The modulation range of the extinction coefficient (K) and the refractive index (N) of the nitrogen-free dielectric antireflection coating is small, and the ...

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Abstract

The invention provides a dielectric antireflection coating forming method and a photoetching method. The dielectric antireflection coating forming method comprises a step of providing a semiconductor substrate, wherein a nitrogenous dielectric antireflection coating is formed on the surface of the semiconductor substrate, and a nitrogen-free dielectric antireflection coating is formed on the surface of the nitrogenous dielectric antireflection coating. The dielectric antireflection coating enlarges modulation range of an extinction coefficient and a refractive coefficient of the dielectric antireflection coating.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a dielectric anti-reflection coating and a photolithography method. Background technique [0002] In the manufacturing process of semiconductor devices, photolithography is an important process to transfer the pattern in the mask plate to the photoresist layer. With the continuous reduction of feature size, the difficulty of photolithography is increasing. When defining patterns in the photoresist layer, due to the high reflection coefficient of the semiconductor substrate (including metal layer and dielectric layer) under the photoresist , so that the exposure light source is easy to reflect on the surface of the semiconductor substrate, resulting in deformation or size deviation of the photoresist pattern, resulting in incorrect transfer of the mask pattern. In order to eliminate the reflection of the light source, a layer of anti-reflection coati...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L21/027
Inventor 邓浩张彬
Owner SEMICON MFG INT (SHANGHAI) CORP
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